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參數(shù)資料
| 型號： | UPA827TF |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
| 中文描述： | 高頻低噪聲放大器NPN硅外延雙晶體管，配有6引腳2 × 2SC5179薄型小微型模具 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 80K |
| 代理商： | UPA827TF |
P
PA827TF
10
S PARAMETER Q2
V
CE
= 2 V, I
C
= 3 mA, Z
0
= 50
:
FREQUENCY
GHz
S
11
S
21
S
12
S
22
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
.10
.20
.30
.40
.50
.60
.70
.80
.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
.90
.88
.85
.82
.77
.73
.68
.63
.58
.53
.49
.45
.42
.38
.35
.33
.30
.28
.26
.24
.22
.20
.19
.18
.17
.16
.16
.16
.16
.16
e
6.34
e
12.58
e
18.91
e
24.80
e
30.57
e
36.24
e
41.66
e
46.88
e
51.46
e
55.76
e
59.82
e
63.47
e
67.34
e
70.77
e
74.44
e
78.08
e
82.13
e
86.33
e
90.80
e
95.31
e
100.32
e
105.66
e
111.76
e
118.32
e
125.55
e
133.16
e
141.34
e
149.28
e
157.91
e
165.06
6.39
6.20
6.14
5.97
5.79
5.59
5.41
5.23
5.02
4.80
4.60
4.39
4.19
4.01
3.84
3.67
3.52
3.39
3.25
3.13
3.02
2.92
2.82
2.74
2.66
2.58
2.51
2.44
2.38
2.31
169.68
160.94
153.06
145.83
139.18
133.26
127.08
121.55
116.05
111.07
106.45
102.03
98.04
94.17
90.52
87.27
84.07
80.77
77.74
74.96
72.04
69.38
66.73
64.32
61.81
59.27
56.77
54.42
51.99
49.68
.02
.03
.04
.06
.07
.08
.09
.10
.11
.11
.12
.13
.14
.15
.15
.16
.17
.18
.18
.19
.20
.21
.21
.22
.23
.24
.24
.25
.26
.27
84.84
80.33
76.31
73.00
70.49
67.69
65.74
63.80
62.24
61.38
60.05
59.31
58.37
57.55
56.69
55.98
54.93
54.04
53.16
52.36
51.56
50.62
49.76
48.98
48.10
47.12
46.27
45.03
44.06
43.08
.98
.96
.92
.88
.83
.79
.74
.70
.66
.63
.60
.57
.54
.51
.49
.47
.44
.42
.40
.38
.36
.34
.32
.31
.29
.27
.25
.23
.21
.20
e
5.82
e
11.25
e
16.31
e
20.79
e
24.41
e
28.04
e
30.52
e
33.20
e
35.07
e
36.80
e
38.48
e
39.71
e
40.97
e
42.29
e
43.54
e
44.79
e
46.16
e
47.31
e
48.48
e
49.40
e
50.55
e
51.95
e
53.14
e
54.66
e
56.28
e
57.94
e
59.85
e
62.03
e
64.06
e
66.61
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PDF描述 |
|---|---|
| UPA828 | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA828TF | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA828TF-T1 | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA831 | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA827TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
| UPA827TF-T1-A | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA828 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA828TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA828TD-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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