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參數(shù)資料
| 型號： | UPA827TF-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
| 中文描述： | 高頻低噪聲放大器NPN硅外延雙晶體管，配有6引腳2 × 2SC5179薄型小微型模具 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 80K |
| 代理商： | UPA827TF-T1 |
The information in this document is subject to change without notice.
SILICON TRANSISTOR
P
PA827TF
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 6-PIN 2
u
2SC5179) THIN-TYPE SMALL MINI MOLD
1997
Document No. P12692EJ1V0DS00 (1st edition)
Date Published July 1997 N
Printed in Japan
PRELIMINARY DATA SHEET
PIN CONFIGURATION (Top View)
FEATURES
High gain with low operating current
|S
21e
|
|S
21e
|
6-pin thin-type small mini mold package
Built-in 2 transistors (2
u
2SC5179)
2
= 9 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
2
= 8.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
ORDERING INFORMATION
Part Number
Quantity
Packing Style
P
PA827TF
Loose products
(50 pcs)
P
PA827TF-T1
Taping products
(3 kpcs/reel)
Remark
If you require an evaluation sample, please contact
an NEC Sales Representative.(Unit sample quantity
is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
10
mA
Total Power Dissipation
P
T
30 in 1 element
60 in 2 element
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
e
65 to 150
°C
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2
Emitter), Pin 4 (Q2 Base) face to
perforation side of the tape.
PACKAGE DRAWINGS (Unit: mm)
B1
Q1
Q2
6
5
4
3
2
1
E2
B2
C1
E1
C2
PIN CONNECTIONS
1. Collector(Q1)
2. Emitter
3. Collector (Q2)
(Q1)
4. Base
5. Emitter (Q2)
6. Base
(Q2)
(Q1)
R
2
1
0
0
0
0
3
2
1
4
5
6
0
2.10±0.1
1.25±0.1
0
0
+
–
相關(guān)PDF資料 |
PDF描述 |
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| UPA827TF | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
| UPA828 | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA828TF | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA828TF-T1 | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA831 | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA827TF-T1-A | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA828 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA828TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA828TD-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA828TD-T3-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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