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參數(shù)資料
| 型號： | UPA2712GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 開關的P -溝道功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 89K |
| 代理商： | UPA2712GR |
2002
MOS FIELD EFFECT TRANSISTOR
μ
PA2712GR
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
G15980EJ2V0DS00 (2nd edition)
November 2002 NS CP(K)
The mark
!
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
DESCRIPTION
The
μ
PA2712GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
Low on-state resistance
R
DS(on)1
= 13 m
MAX. (V
GS
=
10 V, I
D
=
5.0 A)
R
DS(on)2
= 21 m
MAX. (V
GS
=
4.5 V, I
D
=
5.0 A)
R
DS(on)3
= 26 m
MAX. (V
GS
=
4.0 V, I
D
=
5.0 A)
Low C
iss
: C
iss
= 2000 pF TYP.
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2712GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
20
m
10
m
40
2
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
Total Power Dissipation
Note3
I
D(DC)
A
I
D(pulse)
A
P
T1
W
P
T2
2
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note4
Single Avalanche Energy
Note4
T
stg
55 to +150
°C
I
AS
10
A
E
AS
10
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3.
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
4.
Starting T
ch
= 25°C, V
DD
=
15 V, R
G
= 25
, L = 100
μ
H, V
GS
=
20
→
0 V
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1, 2, 3
4
5, 6, 7, 8 ; Drain
; Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
相關PDF資料 |
PDF描述 |
|---|---|
| UPA2713GR | SWITCHING P-CHANNEL POWER MOSFET |
| UPA2714GR | SWITCHING P-CHANNEL POWER MOSFET |
| UPA2781GR | SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
| UPA502T | N-CHANNEL MOS FET 5-PIN 2 CIRCUITS |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2712GR-E1-A | 制造商:Renesas Electronics 功能描述:Pch -30V -10A 13m@10V 8SOP Cut Tape |
| UPA2713 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA2713GR Data Sheet | Data Sheet[01/2002] |
| UPA2713GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOSFET |
| UPA2713GR-E1-A | 制造商:Renesas Electronics 功能描述:Pch -30V -8A 16m@10V 8SOP Cut Tape |
| UPA2714 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA2714GR Data Sheet | Data Sheet[11/2002] |
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