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參數(shù)資料
| 型號(hào)： | UPA1817GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | UPA1817GR-9JG |
Data Sheet G16253EJ1V0DS
2
μ
PA1817
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
20 V, V
GS
= 0 V
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
12 V, V
DS
= 0 V
V
DS
=
10 V, I
D
=
1.0 mA
m
10
1.5
μ
A
Gate Cut-off Voltage
V
GS(off)
0.5
1.1
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
10 V, I
D
=
6.0 A
15
30
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
4.5
V, I
D
=
6.0 A
9.6
12
m
R
DS(on)2
V
GS
=
4.0 V, I
D
=
6.0 A
10
12.5
m
R
DS(on)3
V
GS
=
2.5 V, I
D
=
6.0 A
14.5
19.2
m
Input Capacitance
C
iss
V
DS
=
10 V
3100
pF
Output Capacitance
C
oss
V
GS
= 0 V
730
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
450
pF
Turn-on Delay Time
t
d(on)
V
DD
=
10
V, I
D
=
6.0 A
29
ns
Rise Time
t
r
V
GS
=
4.0 V
235
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
170
ns
Fall Time
t
f
230
ns
Total Gate Charge
Q
G
V
DD
=
16 V
27
nC
Gate to Source Charge
Q
GS
V
GS
=
4.0 V
5.6
nC
Gate to Drain Charge
Q
GD
I
D
=
12 A
12
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 12 A, V
GS
= 0 V
0.82
V
Reverse Recovery Time
t
rr
I
F
= 12 A, V
GS
= 0 V
70
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
52
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS (
)
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
GS
Wave Form
DS
Wave Form
V
GS(
)
V
DS(
)
10
%
0
0
90
%
90
%
90
%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
% 10
%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1817 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2707GR-E1 | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2707GR-E1-A | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2707GR-E2 | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2707GR-E2-A | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1817GR-9JG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1817GR-9JG-E1-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 12A 8-Pin Power TSSOP T/R Cut Tape |
| UPA1817GR-9JG-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1818 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1818GR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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