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MOS FIELD EFFECT TRANSISTOR
μ
PA2707GR
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. G17032EJ1V0DS00 (1st edition)
Date Published June 2005 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The
μ
PA2707GR is N-channel MOS Field Effect
Transistor designed for DC/DC converter and power
management applications of notebook computer.
FEATURES
Low on-state resistance
R
DS(on)1
= 4.3 m
MAX. (V
GS
= 10 V, I
D
= 9.0 A)
R
DS(on)2
= 5.6 m
MAX. (V
GS
= 4.5 V, I
D
= 9.0 A)
Low C
iss
: C
iss
= 6600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
20
±
19
±
76
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
Total Power Dissipation (PW = 10 sec)
Note2
I
D(DC)
A
I
D(pulse)
A
P
T1
1.1
W
P
T2
2.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
55 to +150
°C
I
AS
19
A
E
AS
36
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, L = 100
μ
H, V
GS
= 20
→
0 V
THERMAL RESISTANCE
Channel to Ambient
Note
Channel to Drain Lead
Note
R
th(ch-A)
114
°C/W
R
th(ch-L)
22
°C/W
Note
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2707GR-E1
Power SOP8
μ
PA2707GR-E1-A
Note
Power SOP8
μ
PA2707GR-E2
Power SOP8
μ
PA2707GR-E2-A
Note
Power SOP8
Note
Pb-free (This product does not contain Pb in
external electrode and other parts.)