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參數(shù)資料
| 型號(hào)： | UPA104 |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH FREQUENCY NPN TRANSISTOR ARRAY |
| 中文描述： | 高頻NPN晶體管陣列 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | UPA104 |
μ
PA104
6
Data Sheet P10709EJ2V0DS00
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to maintain the minimum ground impedance (to prevent undesired
oscillation).
(3) Design circuits connected Sub pin to the lowest voltage to prevent latch-up.
(4) Design circuits as each pin voltage difference within 15 V maximum.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods and conditions
than the recommended conditions are to be consulted with our sales representatives.
μ
PA104G
Soldering process
Soldering conditions
Recommended
condition symbol
Infrared ray reflow
Package peak temperature: 235
°
C, Hour: within 30 s. (more than 210
°
C),
Time: 2 times, Limited days: no.
Note
VPS
Package peak temperature: 215
°
C, Hour: within 40 s. (more than 200
°
C),
Time: 2 times, Limited days: no.
Note
Wave soldering
Soldering tub temperature: less than 260
°
C, Hour: within 10 s.
Time: 1 time, Limited days: no.
Note
Pin part heating
Pin area temperature: less than 300
°
C, Hour: within 3 s./pin
Limited days: no.
Note
μ
PA104B
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230
°
C or below,
Reflow time: 10 seconds or below (210
°
C or higher),
Number of reflow process: 1, Exposure limit
*
: None
Partial heating method
Terminal temperature: 260
°
C or below,
Flow time: 10 seconds or below,
Exposure limit
*
: None
Note
It is the storage days after opening a dry pack, the storage conditions are 25
°
C, less than 65 % RH.
Caution The combined use of soldering method is to be avoided (However, except the pin area heating
method).
For details of recommended soldering conditions for surface mounting, refer to information
document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
IR35-00-2
VP15-00-2
WS60-00-1
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|---|---|
| UPA104G-E1 | PT 5C 5#20 SKT RECP |
| UPA104B | HIGH FREQUENCY NPN TRANSISTOR ARRAY |
| UPA104B-E1 | HIGH FREQUENCY NPN TRANSISTOR ARRAY |
| UPA104G | HIGH FREQUENCY NPN TRANSISTOR ARRAY |
| UPA1800GR-9JG | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA104B | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY NPN TRANSISTOR ARRAY |
| UPA104B-E1 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY NPN TRANSISTOR ARRAY |
| UPA104G | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY NPN TRANSISTOR ARRAY |
| UPA104G-E1 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY NPN TRANSISTOR ARRAY |
| UPA130 | 制造商:ATC DIVERSIFIED ELECTRONICS 功能描述:Power Alert, Three Phase Voltage Indicator |
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