- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361575 > UP1868L-AA3-F-R (友順科技股份有限公司) LOW SATURATION VOLTAGE PNP POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | UP1868L-AA3-F-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | LOW SATURATION VOLTAGE PNP POWER TRANSISTOR |
| 中文描述： | 低飽和電壓PNP功率晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 210K |
| 代理商： | UP1868L-AA3-F-R |
UP1868
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R207-015,A
2 of 4
ABS OLUT E MAX IMUM RAT INGS
(Ta=25
℃
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C(PEAK)
I
C
P
C
T
J
T
STG
RATINGS
-15
-12
-6
-20
-6
3
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL CHARACT ERIST ICS
(at Ta = 25
℃
unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
TEST CONDITIONS
I
C
=-100μA
I
C
=-10mA
I
E
=-100μA
I
C
=-500mA,I
B
=-5mA
I
C
=-2A, I
B
=-50mA
I
C
=-6A, I
B
=-250mA
V
BE(SAT)
I
C
=-6A, I
B
=-250mA
V
BE(ON)
V
CE
=-1V, I
C
=-6A
V
CB
=-12V
I
CBO
V
CB
=-12V,Ta=100
℃
I
EBO
V
EB
=-6V
h
FE1
V
CE
=-1V , I
C
=-10mA
h
FE2
V
CE
=-1V , I
C
=-500mA
h
FE3
V
CE
=-1V , I
C
=-5mA
h
FE4
V
CE
=-1V , I
C
=-10A
f
T
V
CE
=-10V, I
C
=-100mA, f=50MHz
C
ob
V
CB
=-20V, f=1MHz
t
ON
I
C
=-4A, I
B1
=-400mA
t
OFF
I
B2
=400mA, V
CC
=-10V
MIN
-15
-12
-6
300
300
200
150
TYP
-55
-132
-1050 -1200
-950 -1050
80
161
120
116
MAX
-100
-160
-440
UNIT
V
V
V
mV
mV
mV
mV
mV
nA
μA
nA
Breakdown Voltage (Note)
Collector-Emitter Saturation Voltage
(Note)
V
CE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage (Note)
-10
-1.0
-10
1000
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain (Note)
Current Gain Bandwidth Product
Output Capacitance
MHz
pF
Switching Times
ns
Note: Pulse test: Pulse Width=300
μ
s, Duty Cycle
≦
2%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UP2518 | LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| UP2518-AE3-6-R | LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| UP2518L-AE3-6-R | LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| UPA0J103MPD | ALUMINUM ELECTROLYTIC CAPACITORS |
| UPA0J182MPD | ALUMINUM ELECTROLYTIC CAPACITORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UP1868L-AA3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW SATURATION VOLTAGE PNP POWER TRANSISTOR |
| UP1-8TFU52-UZZ81 | 制造商:Schurter Electronic Components 功能描述:PUSHBUTTON SWITCH, DPDT, 16A, 115V, Contact Configuration:DPDT, Switch Operation |
| UP1951PQDD | 制造商:UPI 功能描述: |
| UP1B-100 | 制造商:COOPER BUSSMANN 功能描述:Ind Power Wirewound 10uH 20% 100KHz Ferrite 1.5A T/R |
| UP1B-100-R | 功能描述:固定電感器 10uH 1.9A 0.1107ohms RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。