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參數(shù)資料
| 型號： | UP1868L-AA3-C-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | LOW SATURATION VOLTAGE PNP POWER TRANSISTOR |
| 中文描述： | 低飽和電壓PNP功率晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 210K |
| 代理商： | UP1868L-AA3-C-R |
UP1868
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R207-015,A
2 of 4
ABS OLUT E MAX IMUM RAT INGS
(Ta=25
℃
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C(PEAK)
I
C
P
C
T
J
T
STG
RATINGS
-15
-12
-6
-20
-6
3
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL CHARACT ERIST ICS
(at Ta = 25
℃
unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
TEST CONDITIONS
I
C
=-100μA
I
C
=-10mA
I
E
=-100μA
I
C
=-500mA,I
B
=-5mA
I
C
=-2A, I
B
=-50mA
I
C
=-6A, I
B
=-250mA
V
BE(SAT)
I
C
=-6A, I
B
=-250mA
V
BE(ON)
V
CE
=-1V, I
C
=-6A
V
CB
=-12V
I
CBO
V
CB
=-12V,Ta=100
℃
I
EBO
V
EB
=-6V
h
FE1
V
CE
=-1V , I
C
=-10mA
h
FE2
V
CE
=-1V , I
C
=-500mA
h
FE3
V
CE
=-1V , I
C
=-5mA
h
FE4
V
CE
=-1V , I
C
=-10A
f
T
V
CE
=-10V, I
C
=-100mA, f=50MHz
C
ob
V
CB
=-20V, f=1MHz
t
ON
I
C
=-4A, I
B1
=-400mA
t
OFF
I
B2
=400mA, V
CC
=-10V
MIN
-15
-12
-6
300
300
200
150
TYP
-55
-132
-1050 -1200
-950 -1050
80
161
120
116
MAX
-100
-160
-440
UNIT
V
V
V
mV
mV
mV
mV
mV
nA
μA
nA
Breakdown Voltage (Note)
Collector-Emitter Saturation Voltage
(Note)
V
CE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage (Note)
-10
-1.0
-10
1000
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain (Note)
Current Gain Bandwidth Product
Output Capacitance
MHz
pF
Switching Times
ns
Note: Pulse test: Pulse Width=300
μ
s, Duty Cycle
≦
2%
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