參數(shù)資料
型號: UP1855-B-AA3-R
廠商: 友順科技股份有限公司
英文描述: HIGH CURRENT TRANSISTOR
中文描述: 高當(dāng)前的晶體管
文件頁數(shù): 3/4頁
文件大?。?/td> 110K
代理商: UP1855-B-AA3-R
UP1855
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R220-015.D
3 of 4
T Y PICAL CHARACT ERIS T ICS
Collector-Emitter Saturation Voltagevs.
Collector Current
Ta = 25
0
0.8
1.0
C
V
C
Collector Current, Ic (A)
10
0.2
1.2
0.001
0.01
1
1.6
0.4
I
C
/ I
B
= 50
0.1
1.4
0.6
Collector-Emitter Saturation Voltage vs.
Collector Current
0
0.8
1.0
C
V
C
Collector Current, Ic (A)
10
0.2
1.2
0.001
0.01
1
1.6
0.4
h
FE
=10
0.1
1.4
0.6
+25
-40
+150
I
C
/ I
B
=10
Base-Emitter Turn-on Voltage vs.
Collector Current
0
0.8
1.0
B
V
B
Collector Current, Ic (A)
10
0.2
1.2
0. 001
0 01
1
1.6
0.4
0.1
1.4
0.6
+
25
+
100
-
40
+150
V
CE
= 5V
Safe Operating Area
0. 01
1
C
Collector Voltage, V
CE
(V)
1
100
10
0.1
10
D.C.
1s
100
10ms1
.
0ms 0.1ms
ms
500
DC Current Gainvs.
Collector Current
0
Collector Current, Ic (A)
10
0.001
0.01
1
0.1
Base-Emitter Saturation Voltage vs.
Collector Current
h
FE
=10
0
0.8
1.0
B
V
B
Collector Current, Ic (A)
10
0.2
1.2
0.001
0.01
1
1.6
0.4
0.1
1.4
0.6
+25
-40
+150
D
F
100
200
300
V
CE
= 5V
-40
+25
+100
+100
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