
UP1855
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R220-015.D
2 of 4
ABS OLUAT E MAX IUM RAT INGS
(Ta = 25
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
D
T
J
T
STG
RATINGS
-180
-140
-6
-10
-4
1
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current (Pulse)
Collector Current (DC)
Power Dissipation
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL CHARACT ERIS T ICS
(Ta= 25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
TEST CONDITIONS
I
C
= -100μA
I
C
= -10mA
I
E
= -100μA
V
CB
=-150V
V
CB
=-150V, Ta=100°C
V
EB
=-6V
I
C
=-100mA, I
B
=-5mA
I
C
=-500mA, I
B
=-50mA
I
C
=-1A, I
B
=-100mA
I
C
=-3A, I
B
=-300mA
V
BE (SAT)
I
C
=-3A, I
B
=-300mA
V
BE (ON)
I
C
=-3A, V
CE
=-5V
h
FE1
I
C
=-10mA, V
CE
=-5V
h
FE2
I
C
=-1A, V
CE
=-5V
h
FE3
I
C
=-3A, V
CE
=-5V
h
FE4
I
C
=-10A, V
CE
=-5V
f
T
I
C
=-100mA, V
CE
=-10V, f=50MHz
Cob
V
CB
=-20V, f=1MHz
t
ON
I
C
=-1A, V
CC
=-50V
t
OFF
I
B1
=-100mA, I
B2
=100mA
MIN
-180
-140
-6
TYP
-210
-170
-8
MAX
UNIT
V
V
V
nA
μA
nA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
CBO
-50
-1
-10
-60
-120
-150
-370
-1110
-950
300
Emitter Cut-off Current
I
EBO
Collector-Emitter Saturation Voltage
V
CE (SAT)
-30
-70
-110
-275
-970
-830
200
140
10
110
40
68
1030
mV
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
mV
mV
MHz
pF
ns
ns
100
100
75
DC Current Gain
Transition Frequency
Output Capacitance
Switching Times
Note: Pulse test: t
P
≤
300μs, Duty cycle
≤
2%
CLAS S IFICAT ION OF h
FE2
RANK
RANGE
A
B
100 ~ 200
180 ~ 300