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參數(shù)資料
| 型號： | UNR521DR |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/17頁 |
| 文件大?。?/td> | 552K |
| 代理商： | UNR521DR |
Transistors with built-in Resistor
1
Publication date: January 2004
SJH00024CED
UNR521x Series (UN521x Series)
Silicon NPN epitaxial planar type
For digital circuits
■ Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
■ Resistance by Part Number
Marking symbol (R1)(R2)
UNR5210 (UN5210)
8L
47 k
UNR5211 (UN5211)
8A
10 k
10 k
UNR5212 (UN5212)
8B
22 k
22 k
UNR5213 (UN5213)
8C
47 k
47 k
UNR5214 (UN5214)
8D
10 k
47 k
UNR5215 (UN5215)
8E
10 k
UNR5216 (UN5216)
8F
4.7 k
UNR5217 (UN5117)
8H
22 k
UNR5218 (UN5218)
8I
0.51 k
5.1 k
UNR5219 (UN5219)
8K
1 k
10 k
UNR521D (UN521D)
8M
47 k
10 k
UNR521E (UN521E)
8N
47 k
22 k
UNR521F (UN521F)
8O
4.7 k
10 k
UNR521K (UN521K)
8P
10 k
4.7 k
UNR521L (UN521L)
8Q
4.7 k
4.7 k
UNR521M (UN521M)
EL
2.2 k
47 k
UNR521N (UN521N)
EX
4.7 k
47 k
UNR521T (UN521T)
EZ
22 k
47 k
UNR521V (UN521V)
FD
2.2 k
2.2 k
UNR521Z (UN521Z)
FF
4.7 k
22 k
■ Absolute Maximum Ratings T
a
= 25°C
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
B
R1
R2
C
E
2.1
±
0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0
to
0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
10
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
This product complies with the RoHS Directive (EU 2002/95/EC).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR521E | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR521E(UN521E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR521E00L | 功能描述:TRANS NPN W/RES 60 HFE S-MINI 3P RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNR521F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
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