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| 型號(hào)： | UNR4117Q |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 100mA的一（c）| SPAK |
| 文件頁(yè)數(shù)： | 10/14頁(yè) |
| 文件大小： | 221K |
| 代理商： | UNR4117Q |
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10
Transistors with built-in Resistor
UN
R
4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
Characteristics charts of UN
R
411D
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
Characteristics charts of UN
R
411E
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
0
0
–12
–2
–10
–4
–8
–6
–60
–50
–40
–30
–20
–10
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–0.9mA
–0.8mA
–0–0.7mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–3
–10
–30
–100
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
–1
–3
40
80
120
160
–10
–30
–100 –300 –1000
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
0
Collector to base voltage V
CB
(V)
6
5
4
3
2
1
–1
–3
–10
–30
–100
C
o
f=1MHz
I
E
=0
Ta=25C
–1
–1.5
–3
–10
–30
–100
–300
–1000
–3000
–10000
–4.0
–3.5
–3.0
–2.5
–2.0
Input voltage V
IN
(V)
O
O
μ
A
V
O
=–5V
Ta=25C
–0.01
–0.03
–0.1
–0.3
Output current I
O
(mA)
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–3
–10
–30
–100
I
I
V
O
=–0.2V
Ta=25C
0
0
–12
–2
–10
–4
–8
–6
–60
–50
–40
–30
–20
–10
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–1.0mA
–0.9mA
–0.8mA –0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–3
–10
–30
–100
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
–1
–3
100
200
300
400
–10
–30
–100 –300 –1000
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
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|---|---|
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| UNR4117S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK |
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| UNR4118(UN4118) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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