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參數(shù)資料
| 型號： | UNR2225 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 280K |
| 代理商： | UNR2225 |
UNR22XX Series
3
SJH00010BED
I
Electrical Characteristics (continued)
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resis-
UNR2211/2212/2213/221L
R
1
/R
2
0.8
1.0
1.2
tance
UNR2214
0.17
0.21
0.25
ratio
UNR2218/2219
0.08
0.1
0.12
UNR221D
4.7
UNR221E
2.14
UNR221F/221T
0.47
UNR221K
2.13
UNR221M
0.047
UNR221N
0.1
UNR221V
1.0
UNR221Z
0.21
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
P
T
T
a
0
50
100
150
200
250
0
20
Ambient temperature T
a
(
°
C)
40
80
60
140
120
100
160
T
T
0
Collector to emitter voltage V
CE
(V)
12
2
10
4
8
6
0
60
50
40
30
20
10
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.1 mA
0.3 mA
0.7 0.0.0.4 mA
0.90.8 mA
0.01
0.03
0.1
0.3
Collector current I
C
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
C
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
3
Collector current I
C
(mA)
100
200
300
400
350
250
150
50
10
30
100
300
1
000
F
F
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
Common characteristics chart
Characteristics charts of UNR2210
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UN2224 | Composite Device - Transistors with built-in Resistor |
| UNR2224 | Composite Device - Transistors with built-in Resistor |
| UN2223 | Composite Device - Transistors with built-in Resistor |
| UNR2223 | Composite Device - Transistors with built-in Resistor |
| UN2222 | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR2225(UN2225) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UNR2225 (UN2225) - NPN Transistor with built-in Resistor |
| UNR2226 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR2226(UN2226) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UNR2226 (UN2226) - NPN Transistor with built-in Resistor |
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