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參數(shù)資料
| 型號(hào)： | UNR2225 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁(yè)數(shù)： | 12/17頁(yè) |
| 文件大?。?/td> | 280K |
| 代理商： | UNR2225 |
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UNR22XX Series
12
SJH00010BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
1
3
0.4
10
30
100
300
1
000
3
000
10
000
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
0
Collector to emitter voltage V
CE
(V)
12
2
10
4
8
6
0
240
200
160
120
80
40
C
C
T
a
=
25
°
C
I
B
= 1.2 mA
1.0 mA
0.2 mA
0.4 mA
0.6 mA
0.8 mA
0.01
1
3
Collector current I
C
(mA)
0.1
1
10
100
10
30
100
300
1
000
C
C
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
3
Collector current I
C
(mA)
240
200
160
120
80
40
10
30
100
300
1
000
F
F
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
1
6
5
4
3
2
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
0.01
0.1
0.3
0.1
1
10
0.03
0.3
3
30
100
1
3
10
30
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
Characteristics charts of UNR221K
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UN2224 | Composite Device - Transistors with built-in Resistor |
| UNR2224 | Composite Device - Transistors with built-in Resistor |
| UN2223 | Composite Device - Transistors with built-in Resistor |
| UNR2223 | Composite Device - Transistors with built-in Resistor |
| UN2222 | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR2225(UN2225) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UNR2225 (UN2225) - NPN Transistor with built-in Resistor |
| UNR2226 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR2226(UN2226) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UNR2226 (UN2226) - NPN Transistor with built-in Resistor |
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