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參數(shù)資料
| 型號： | UNR221Z(UN221Z) |
| 英文描述： | 複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| 中文描述： | 複合デバイス-抵抗內(nèi)蔵型トランジスタ |
| 文件頁數(shù)： | 1/17頁 |
| 文件大?。?/td> | 280K |
| 代理商： | UNR221Z(UN221Z) |
Transistors with built-in Resistor
UNR22XX Series
(UN22XX Series)
Silicon NPN epitaxial planer transistor
1
Publication date: January 2002
SJH00010BED
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
I
C
P
T
50
V
Collector current
100
mA
Total power dissipation
200
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
For digital circuits
I
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
I
Resistance by Part Number
Marking Symbol (R
1
)
(UN2210)
8L
(UN2211)
8A
(UN2212)
8B
(UN2213)
8C
(UN2214)
8D
(UN2215)
8E
(UN2216)
8F
(UN2117)
8H
(UN2218)
8I
(UN2219)
8K
UNR221D (UN221D)
UNR221E (UN221E)
UNR221F (UN221F)
UNR221K (UN221K)
UNR221L (UN221L)
UNR221M (UN221M)
UNR221N (UN221N)
UNR221T (UN221T)
UNR221V (UN221V)
UNR221Z (UN221Z)
I
Absolute Maximum Ratings
T
a
=
25
°
C
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
4.7 k
4.7 k
47 k
47 k
47 k
2.2 k
22 k
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
10 k
4.7 k
2.2 k
4.7 k
22 k
2.2 k
4.7 k
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
FF
B
R
1
R
2
C
E
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Unit: mm
Internal Connection
Note) The part numbers in the parenthesis show conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR221XSERIES(UN221XSERIES) | UNR221X Series (UN221X Series) - NPN Transistors with built-in Resistor |
| UNR221T(UN221T) | Composite Device - Transistors with built-in Resistor |
| UNR2216(UN2216) | Composite Device - Transistors with built-in Resistor |
| UNR2215(UN2215) | Composite Device - Transistors with built-in Resistor |
| UNR2214(UN2214) | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR2221 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR2221(UN2221) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
| UNR2221/2222/2223/2224(UN2221/2222/2223/2224) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UNR2221/2222/2223/2224 (UN2221/2222/2223/2224) - NPN Transistor with built-in Resistor |
| UNR222100L | 功能描述:TRANS NPN W/RES 40 HFE MINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
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