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參數(shù)資料
| 型號(hào)： | UNR212Y(UN212Y) |
| 英文描述： | 複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| 中文描述： | 複合デバイス-抵抗內(nèi)蔵型トランジスタ |
| 文件頁數(shù)： | 2/18頁 |
| 文件大?。?/td> | 283K |
| 代理商： | UNR212Y(UN212Y) |
2
Transistors with built-in Resistor
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
I
CBO
I
CEO
Conditions
min
typ
max
– 0.1
Unit
μ
A
μ
A
Collector cutoff current
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
– 0.5
UNR2111
– 0.5
UNR2112/2114/211E/211D/211M/211N/211T
– 0.2
UNR2113
– 0.1
UNR2115/2116/2117/2110
– 0.01
UNR211F/211H
I
EBO
V
EB
= –6V, I
C
= 0
–1.0
mA
UNR2119
–1.5
UNR2118/211L/211V
–2.0
UNR211Z
– 0.4
Collector to base voltage
V
CBO
V
CEO
I
C
= –10mA, I
E
= 0
I
C
= –2mA, I
B
= 0
–50
V
Collector to emitter voltage
–50
V
UNR2111
35
UNR2112/211E
60
UNR2113/2114/211M
80
UNR2115*/2116*/2117*/2110*
160
460
UNR2119/211F/211D/211H h
FE
UNR2118/211L
V
CE
= –10V, I
C
= –5mA
30
20
UNR211N/211T
80
400
UNR211V
6
20
UNR211Z
60
200
Collector to emitter saturation voltage
V
CE(sat)
I
C
= –10mA, I
B
= – 0.3mA
I
C
= –10mA, I
B
= –1.5mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1k
V
CC
= –5V, V
B
= –2.5V, R
L
= 1k
V
CC
= –5V, V
B
= –3.5V, R
L
= 1k
V
CC
= –5V, V
B
= –10V, R
L
= 1k
V
CC
= –5V, V
B
= –6V, R
L
= 1k
V
CB
= –10V, I
E
= 1mA, f = 200MHz
– 0.25
V
UNR211V
– 0.07
– 0.25
V
Output voltage high level
V
OH
–4.9
V
Output voltage low level
– 0.2
UNR2113
V
OL
– 0.2
V
UNR211D
– 0.2
UNR211E
– 0.2
Transition frequency
f
T
80
MHz
UNR2111/2114/2115
10
UNR2112/2117/211T
22
UNR2113/2110/211D/211E
47
UNR2116/211F/211L/211N/211Z
R
1
(–30%)
4.7
(+30%)
k
UNR2118
0.51
UNR2119
1
UNR211H/211M/211V
2.2
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
* h
FE
rank classification (UNR2115/2116/2117/2110)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
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