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參數(shù)資料
| 型號(hào)： | UNR211W |
| 英文描述： | HIGH SIDE DRIVER |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 15/18頁 |
| 文件大?。?/td> | 283K |
| 代理商： | UNR211W |
15
Transistors with built-in Resistor
UN
R
2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
0
0
–12
–2
–10
–4
–8
–6
–50
–150
–100
–200
–175
–125
–75
–25
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–1.0mA
–0.7mA
–0.6mA
–0.5mA
–0.8mA
–0.9mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–1
–0.1
–1
–10
–10
–100
–1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
–1
300
250
200
150
100
50
–10
–100
–1000
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
Characteristics charts of UN
R
211N
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
Characteristics charts of UN
R
211T
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
0
–1
6
5
4
3
2
1
–10
–100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
–1
–0.4
–10
–100
–1000
–10000
–1.4
–1.2
–1.0
–0.8
–0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=–5V
Ta=25C
–0.01
–0.1
–0.1
–1
–10
–100
–1
–10
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
0
0
–12
–2
–10
–4
–8
–6
–50
–150
–100
–200
–175
–125
–75
–25
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–1.0mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.8mA
–0.9mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–1
–0.1
–1
–10
–10
–100
–1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
–1
300
250
200
150
100
50
–10
–100
–1000
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
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|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR211XSERIES(UN211XSERIES) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UNR211X Series (UN211X Series) - Transistors with built-in Resistor |
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| UNR211Z(UN211Z) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR2121 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
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