參數(shù)資料
型號(hào): UNR211W
英文描述: HIGH SIDE DRIVER
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁(yè)數(shù): 13/18頁(yè)
文件大小: 283K
代理商: UNR211W
13
Transistors with built-in Resistor
UN
R
2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN
R
211H
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
V
IN
— I
O
Characteristics charts of UN
R
211L
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
0
0
–12
–2
–10
–4
–8
–6
–120
–100
–80
–60
–40
–20
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–0.5mA
–0.3mA
–0.4mA
–0.2mA
–0.1mA
–0.01
–1
–3
–0.1
–1
–10
–100
–10
–30
–100 –300 –1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
240
200
160
120
80
40
–1
–3
–10
–30
–100
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
0
–1
6
5
4
3
2
1
–3
–10
–30
–100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
–0.01
–0.1 –0.3
–0.1
–1
–10
–100
–1
–3
–10
–30
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
0
0
–12
–2
–10
–4
–8
–6
–240
–200
–160
–120
–80
–40
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–1.0mA
–0.2mA
–0.4mA
–0.6mA
–0.8mA
–0.01
–0.03
–1
–3
–0.1
–0.3
–1
–3
–10
–30
–100
–10
–30
–100 –300 –1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
–1
–3
240
200
160
120
80
40
–10
–30
–100 –300 –1000
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
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