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參數(shù)資料
| 型號(hào)： | UNR1112 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planer transistor |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 354K |
| 代理商： | UNR1112 |
Transistors with built-in Resistor
UNR111x Series
(UN111x Series)
Silicon PNP epitaxial planar transistor
1
Publication date: October 2003
SJH00001BED
For digital circuits
■
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■
Resistance by Part Number
(R
1
)
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
2.2 k
4.7 k
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
10 k
4.7 k
UNR1110 (UN1110)
UNR1111 (UN1111)
UNR1112 (UN1112)
UNR1113 (UN1113)
UNR1114 (UN1114)
UNR1115 (UN1115)
UNR1116 (UN1116)
UNR1117 (UN1117)
UNR1118 (UN1118)
UNR1119 (UN1119)
UNR111D (UN111D)
UNR111E (UN111E)
UNR111F (UN111F)
UNR111H (UN111H)
UNR111L (UN111L)
■
Absolute Maximum Ratings
T
a
=
25
°
C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) The part numbers in the parenthesis show conventional part number.
6.9
±
0.1
2.5
±
0.1
(1.0)
(
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
50
100
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector current
I
C
P
T
mA
Total power dissipation
400
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR1112(UN1112) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR1113 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UNR1113(UN1113) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
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