參數(shù)資料
型號: UNR1117
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer transistor
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁數(shù): 1/14頁
文件大?。?/td> 354K
代理商: UNR1117
Transistors with built-in Resistor
UNR111x Series
(UN111x Series)
Silicon PNP epitaxial planar transistor
1
Publication date: October 2003
SJH00001BED
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Resistance by Part Number
(R
1
)
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
2.2 k
4.7 k
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
10 k
4.7 k
UNR1110 (UN1110)
UNR1111 (UN1111)
UNR1112 (UN1112)
UNR1113 (UN1113)
UNR1114 (UN1114)
UNR1115 (UN1115)
UNR1116 (UN1116)
UNR1117 (UN1117)
UNR1118 (UN1118)
UNR1119 (UN1119)
UNR111D (UN111D)
UNR111E (UN111E)
UNR111F (UN111F)
UNR111H (UN111H)
UNR111L (UN111L)
Absolute Maximum Ratings
T
a
=
25
°
C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) The part numbers in the parenthesis show conventional part number.
6.9
±
0.1
2.5
±
0.1
(1.0)
(
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
50
100
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector current
I
C
P
T
mA
Total power dissipation
400
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
相關PDF資料
PDF描述
UNR1118 Silicon PNP epitaxial planer transistor
UNR1119 Silicon PNP epitaxial planer transistor
UNR111D Silicon PNP epitaxial planer transistor
UNR111E Silicon PNP epitaxial planer transistor
UNR111F Silicon PNP epitaxial planer transistor
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