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參數(shù)資料
| 型號(hào)： | UN5118 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planer transistor |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 235K |
| 代理商： | UN5118 |
2
Transistors with built-in Resistor
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
CEO
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
– 0.1
μ
A
μ
A
– 0.5
UN5111
– 0.5
UN5112/5114/511E/511D/511M/511N/511T
– 0.2
UN5113
– 0.1
UN5115/5116/5117/5110
I
EBO
V
EB
= –6V, I
C
= 0
– 0.01
mA
UN511F/511H
–1.0
UN5119
–1.5
UN5118/511L/511V
–2.0
UN511Z
– 0.4
Collector to base voltage
V
CBO
I
C
= –10
μ
A, I
E
= 0
–50
V
UN511N/511T/511V/511Z
–50
Collector to emitter voltage
V
CEO
I
C
= –2mA, I
B
= 0
–50
V
UN511N/511T
–50
UN5111
35
UN5112/511E
60
UN5113/5114/511M
80
UN5115*/5116*/5117*/5110*
160
460
UN511F/511D/5119/511H
h
FE
V
CE
= –10V, I
C
= –5mA
30
UN5118/511L
20
UN511N/511T
80
400
UN511V
6
20
UN511Z
60
200
Collector to emitter saturation voltage
V
CE(sat)
I
C
= –10mA, I
B
= – 0.3mA
I
C
= –10mA, I
B
= –1.5mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1k
V
CC
= –5V, V
B
= –2.5V, R
L
= 1k
V
CC
= –5V, V
B
= –3.5V, R
L
= 1k
V
CC
= –5V, V
B
= –10V, R
L
= 1k
V
CC
= –5V, V
B
= –6V, R
L
= 1k
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 1mA, f = 200MHz
– 0.25
V
UN511V
– 0.25
Output voltage high level
V
OH
–4.9
V
Output voltage low level
– 0.2
UN5113
V
OL
– 0.2
V
UN511D
– 0.2
UN511E
– 0.2
Transition frequency
f
T
80
MHz
UN511Z
150
UN5111/5114/5115
10
UN5112/5117/511T
22
UN5113/5110/511D/511E
47
UN5116/511F/511L/511N/511Z
R
1
(–30%)
4.7
(+30%)
k
UN5118
0.51
UN5119
1
UN511H/511M/511V
2.2
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
* h
FE
rank classification (UN5115/5116/5117/5110)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UN511D | Silicon PNP epitaxial planer transistor |
| UN511N | Silicon PNP epitaxial planer transistor |
| UN511V | Silicon PNP epitaxial planer transistor |
| UN511E | Silicon PNP epitaxial planer transistor |
| UN511F | Silicon PNP epitaxial planer transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UN5119 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN511D | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN511E | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UN511F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN511H | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
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