參數(shù)資料
型號: UN511N
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer transistor
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN
文件頁數(shù): 1/17頁
文件大?。?/td> 235K
代理商: UN511N
1
Transistors with built-in Resistor
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Silicon PNP epitaxial planer transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
I
Resistance by Part Number
Marking Symbol
G
UN5111
G
UN5112
G
UN5113
G
UN5114
G
UN5115
G
UN5116
G
UN5117
G
UN5118
G
UN5119
G
UN5110
G
UN511D
G
UN511E
G
UN511F
G
UN511H
G
UN511L
G
UN511M
G
UN511N
G
UN511T
G
UN511V
G
UN511Z
(R
1
)
10k
22k
47k
10k
10k
4.7k
22k
0.51
1k
47k
47k
47k
4.7k
2.2k
4.7k
2.2k
4.7k
22k
2.2k
4.7k
(R
2
)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
10k
4.7k
47k
47k
47k
2.2k
22k
6A
6B
6C
6D
6E
6F
6H
6I
6K
6L
6M
6N
6O
6P
6Q
EI
EW
EY
FC
FE
I
Absolute Maximum Ratings
(Ta=25C)
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
–50
V
Collector to emitter voltage
–50
V
Collector current
–100
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
2.1
±
0.1
1
±
0
0
±
0
0
±
0
0
+
-
0
+
-
2
±
0
1.25
±
0.1
0.425
0.425
1
3
2
0
0
0
0
0.2
±
0.1
B
C
R1
R2
E
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相關代理商/技術參數(shù)
參數(shù)描述
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