參數(shù)資料
型號: UN4113
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁數(shù): 14/15頁
文件大?。?/td> 376K
代理商: UN4113
14
UNR41XX Series
SJH00018CED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR411N
0
10
20
1
5
35
5
25
30
40
10
1
3
f
=
1 MHz
T
a
=
25
°
C
Collector to base voltage V
CB
(V)
C
o
0.1
0
1
10
100
1
000
2.5
2.0
1.5
1.0
0.5
Input voltage V
IN
(V)
O
O
V
O
=
5 V
T
a
=
25
°
C
0.01
0.03
1
0.1
0.3
1
3
10
30
100
3
10
30
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
0
0
Collector to emitter voltage V
CE
(V)
12
2
10
4
8
6
140
120
100
80
60
40
20
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.2 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0.01
0.1
0.3
Collector current I
C
(mA)
0.03
0.1
0.3
1
1
3
10
30
100
C
C
T
a
=
75
°
C
25
°
C
25
°
C
I
C
/ I
B
= 10
0
1
3
Collector current I
C
(mA)
50
100
150
200
300
250
10
30
100
300
1
000
D
F
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
10
20
1
5
35
5
25
30
40
10
1
3
f
=
1 MHz
T
a
=
25
°
C
Collector to base voltage V
CB
(V)
C
o
1
0
3
10
30
100
2.5
2.0
1.5
1.0
0.5
Input voltage V
IN
(V)
O
O
V
O
=
5 V
T
a
=
25
°
C
0.1
0.1
0.3
1
3
10
30
100
1
0.3
Output current I
O
(mA)
3
10
30
100
I
I
相關(guān)PDF資料
PDF描述
UNR4114 Composite Device - Transistors with built-in Resistor
UN4114 Composite Device - Transistors with built-in Resistor
UNR4115 Composite Device - Transistors with built-in Resistor
UN4115 Composite Device - Transistors with built-in Resistor
UNR4116 Composite Device - Transistors with built-in Resistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UN4114 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type
UN4114TA 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
UN4115 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type
UN4115Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK
UN4115R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK