參數(shù)資料
型號(hào): UN4113
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁(yè)數(shù): 13/15頁(yè)
文件大?。?/td> 376K
代理商: UN4113
13
UNR41XX Series
SJH00018CED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR411L
Characteristics charts of UNR411M
0
0
Collector to emitter voltage V
CE
(V)
–12
–2
–10
–4
–8
–6
240
200
160
120
80
40
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.2 mA
0.4 mA
0.6 mA
0.8 mA
0.01
0.03
1
3
Collector current I
C
(mA)
0.1
0.3
1
3
10
30
100
10
30
100
300
1
000
C
C
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
3
240
200
160
120
80
40
10
30
100
300
1
000
D
F
I
C
(mA)
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
1
6
5
4
3
2
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
0.01
0.1
0.3
0.1
1
10
100
1
3
10
30
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
C
0
0
Collector to emitter voltage V
CE
(V)
12
2
10
4
8
6
140
120
100
80
60
40
20
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.9 mA
0.2 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.01
0.03
1
3
Collector current I
C
(mA)
0.1
0.3
1
3
10
30
100
10
30
100
300
1
000
C
C
I
C
/ I
B
= 33.3
T
a
=
75
°
C
25
°
C
25
°
C
0
1
3
Collector current I
C
(mA)
40
80
120
200
160
10
30
100
300
1
000
D
F
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
相關(guān)PDF資料
PDF描述
UNR4114 Composite Device - Transistors with built-in Resistor
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UN4115 Composite Device - Transistors with built-in Resistor
UNR4116 Composite Device - Transistors with built-in Resistor
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