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參數(shù)資料
| 型號(hào)： | UML6N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 2-WIRE FACTORY PROGRAMMED W/TIN PLATING |
| 中文描述： | 通用晶體管（孤立的晶體管和二極管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 81K |
| 代理商： | UML6N |
UML6N
Transistors
z
Absolute maximum ratings
(Ta=25
°
C)
Di1
Parameter
Symbol
I
O
I
FSM
V
R
Tj
Tstg
55~
+
125
°
C
Range of storage temperature
Tr2
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
d
Tj
Tstg
55~
+
125
°
C
1 Each terminal mounted on a recommended land.
z
Electrical characteristics
(Ta=25
°
C)
Di1
Parameter
Symbol
Min.
Typ.
Max.
V
R
0.40
0.50
Forward voltage
Reverse current
I
R
4.0
30
Tr2
Parameter
Symbol
Min.
Typ.
Max.
BV
CEO
12
Collector-emitter breakdown voltage
BV
CBO
15
Collector-base breakdown voltage
BV
EBO
6
Emitter-base breakdown voltage
I
CBO
100
Collector cut-off current
I
EBO
100
Emitter cut-off current
V
CE(sat)
90
250
Collector-emitter saturation voltage
h
FE
270
680
DC current gain
Rev.A
2/3
Limits
200
1
30
125
Unit
mA
A
V
°
C
Average revtified forward current
Forward current surge peak (60Hz, 1
∞
)
Reverse voltage (DC)
Junction temperature
Limits
15
12
6
500
1
120
150
1
Unit
V
V
V
mA
A
mW
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Unit
V
μ
A
Conditions
I
F
=
200mA
V
R
=
10V
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
Transition frequency
Collector output capacitance
f
T
320
7.5
MHz
pF
V
CE
=
2V, I
E
=
10mA, f
=
100MHz
I
C
=
1mA
I
C
=
10
μ
A
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
=
200mA, I
B
=
10mA
V
CE
=
2V, I
C
=
10mA
Cob
z
Electrical characteristic curves
Di1
1
μ
10
μ
100
μ
1m
10m
100m
1
F
F
FORWARD VOLTAGE : V
F
(V)
0
0.1
0.2
0.3
0.4
0.5
0.6
C
°
5
2
1
=
a
T
C
°
5
7
C
°
5
2
C
°
5
2
Fig.1 Forward characteristics
10n
100n
1
μ
10
μ
100
μ
1m
10m
R
R
REVERSE VOLTAGE : V
R
(V)
0
10
20
30
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
Fig.2 Reverse characteristics
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