參數(shù)資料
型號(hào): UMT1N
廠商: Rohm CO.,LTD.
英文描述: General Purpose Transistor (Isolated Dual Transistors)
中文描述: 通用晶體管(隔離雙晶體管)
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 80K
代理商: UMT1N
EMT1 / UMT1N / IMT1A
Transistors
General Purpose Transistor
(Isolated Dual Transistors)
EMT1 / UMT1N / IMT1A
z
Features
1) Two 2SA1037AK chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent,
eliminating interference.
z
Structure
Epitaxial planar type
PNP silicon transistor
z
Equivalent circuit
Rev.A
1/3
EMT1 / UMT1N
(3)
IMT1A
Tr
2
Tr
1
(2)
(1)
(4)
(5)
(6)
Tr
2
Tr
1
(4)
(5)
(6)
(3)
(2)
(1)
The following characteristics apply to both
Tr
1
and Tr
2
.
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
P
C
EMT1, UMT1N
IMT1A
Limits
60
50
6
150
150
55 to +150
150 (TOTAL)
300 (TOTAL)
Unit
V
V
V
mA
mW
1
°
C
°
C
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
z
External dimensions
(Unit : mm)
ROHM : EMT6
EMT1
ROHM : UMT6
UMT1N
ROHM : SMT6
IMT1A
Abbreviated symbol : T1
Abbreviated symbol : T1
Abbreviated symbol : T1
0
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0
0
0
0
1
1
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
Each lead has same dimensions
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
Each lead has same dimensions
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