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參數(shù)資料
| 型號： | UK2996L-TA3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 600V SILICON N-CHANNEL POWER MOSFET |
| 中文描述： | 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 137K |
| 代理商： | UK2996L-TA3-T |
UK2996
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-063 ,A
5 of 6
TYPICAL CHARACTERISTICS
Drain Currentvs. Drain-Source Voltage
10
8
6
4
2
00
4
8
12
16
20
V
GS
=4V
4.5V
4.75V
5V
5.25V
5.5V
COMMON
SOURCE
T
C
=25
PULSE TEST
Drain-Source Voltage, V
DS
(V)
D
D
(
Drain-Source on Resistancevs.
Drain Current
0.3
1
Drain Current, I
D
(A)
30
D
D
)
0.5
V
GS
=10V
3
5
10
COMMON
SOURCE
TC=25
PULSE TEST
0
0.2
1.0
1.8
1.6
2
0.4
0.6
0.8
1.2
1.4
2.2
Drain Currentvs. Gate-Source Voltage
10
8
6
4
2
00
2
4
6
8
10
T
C
=-55
Gate-Source Voltage, V
GS
(V)
D
D
(
COMMON
SOURCE
V
=10V
PULSE TEST
12
100
25
Drain-Source Voltagevs. Gate-Source
Voltage
12
8
4
0
0
4
8
12
16
20
I
D
=10A
Gate-Source Voltage, V
GS
(V)
D
D
(
COMMON
SOURCE
T
C
=25
PULSE TEST
16
I
D
=5A
I
D
=2.5A
12
16
Continuous Source Current vs. Drain-
Source Voltage
0.10
-0.4
Drain-Source Voltage, V
DS
(V)
C
S
V
GS
=0V
-0.8
-1.2
0.3
5
10
30
3
1
0.5
COMMON SOURCE
TC=25
PULSE TEST
1
3
10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UK2996L-TF3-T | 600V SILICON N-CHANNEL POWER MOSFET |
| UK2996-TA3-T | 600V SILICON N-CHANNEL POWER MOSFET |
| UK2996-TF3-T | 600V SILICON N-CHANNEL POWER MOSFET |
| ULN2001A-ULN2002A | SEVEN DARLINGTON ARRAYS |
| ULN2001D1 | Seven darlington array |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UK2996L-TF1-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:600V SILICON N-CHANNEL POWER MOSFET |
| UK2996L-TF2-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:600V SILICON N-CHANNEL POWER MOSFET |
| UK2996L-TF3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:600V SILICON N-CHANNEL POWER MOSFET |
| UK2996-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:600V SILICON N-CHANNEL POWER MOSFET |
| UK2996-TF3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:600V SILICON N-CHANNEL POWER MOSFET |
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