參數(shù)資料
型號: UK2996L-TA3-T
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: JFETs
英文描述: 600V SILICON N-CHANNEL POWER MOSFET
中文描述: 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, TO-220, 3 PIN
文件頁數(shù): 3/6頁
文件大小: 137K
代理商: UK2996L-TA3-T
UK2996
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-063 ,A
3 of 6
SOURCE
DRAIN DIODE CHARACTERISTICS
(Ta = 25°C)
PARAMETER
SYMBOL
V
SD
I
S
TEST CONDITIONS
V
GS
= 0V, I
S
= 10A
Integral Reverse p-n Junction
Diode in the MOSFET
MIN
TYP MAX UNIT
-1.7
10
Diode Forward Voltage
Continuous Source Current (body diode)
V
A
Pulse Source Current (body diode)
I
SM
Gate
Source
Drain
30
A
Reverse Recovery Time
Reverse Recovery Charge
t
RR
Q
RR
1600
17
ns
μC
V
GS
= 0V, I
S
= 10A,
dI
F
/dt = 100 A/μs
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