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參數(shù)資料
| 型號(hào)： | UF740-TA3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET |
| 中文描述： | 10A條，為400V，0.55 Ohm的N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | UF740-TA3-T |
UF740
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-078,A
T Y PICAL PERFORMANCE CUV ES
(Unless Otherwise Specified)
100
10
0.1
Drain to Source Voltage, V
DS
(V)
D
D
(
10
2
10
1
1
10
3
D
D
(
Drainto Source Voltage, V
DS
(V)
80
200
Output Characteristics
0
160
40
0
3
9
12
15
120
6
Forward Bias Safe Operating Area
T
C
=25
T
=MAX RATED
SINGLE PULSE
DC
10ms
1ms
100
s
10 s
OPERATION IN THIS
REGION IS LIMITED BY
R
DS(ON)
V
GS
= 10V
V
GS
= 6.0V
PULSE DURATION=80
DUTY CYCLE = 0.5% MAX
S
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
D
D
(
Drain to Source Voltage, V
DS
(V)
4
6
10
Saturation Characteristics
0
8
2
0
3
6
9
12
15
Gate to Source Voltage, V
SD
(V)
2
8
10
Transfer Characteristics
0.1
0
1
10
100
6
4
D
D
V
GS
=5.0V
V
GS
=10V
V
GS
=4.5V
PULSE DURATION=80
DUTY CYCLE = 0.5% MAX
S
V
GS
=5.5V
V
GS
=4.0V
V
GS
=6.0V
T
J
= 25
T
J
= 150
PULSE DURATION=80
DUTY CYCLE = 0.5% MAX
V
DS
50V
S
N
B
Junction Temperature, T
J
(
)
0
80
Normalized Drainto Source Breakdown Voltage vs. Junction
Temperature
0.75
160
-60
1.25
40
120
0.85
0.95
1.05
1.15
140
100
60
20
-40
I
D
=250
A
-20
Capacitance vs. Drainto Source Voltage
C
Drain to Source Voltage, V
DS
(V)
0
500
1000
2500
2000
1500
C
ISS
V
GS
=0V, f=1MHz
C
ISS
=C
GS
+C
GD
C
RSS
=C
GD
C
OSS
C
DS
+C
GD
C
OSS
C
RSS
1
10
2
2
10
5
2
5
10
3
2
5
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|---|---|
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