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參數(shù)資料
| 型號： | UF740-TA3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET |
| 中文描述： | 10A條，為400V，0.55 Ohm的N溝道功率MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 172K |
| 代理商： | UF740-TA3-T |
UF740
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-078,A
ABS OLUT E MAX IMUM RAT INGS
(
T
C
= 25
, Unless Otherwise Specified)
PARAMETER
SYMBOL
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
RATINGS
400
400
±20
10
6.3
40
125
1.0
UNIT
V
V
V
A
A
A
W
W/
Drain to Source Voltage (T
J
=25
Drain to Gate Voltage (R
GS
= 20k
) (T
J
=25
Gate to Source Voltage
~125
)
~125
)
Continuous
T
C
= 100
Pulsed
Drain Current
Maximum Power Dissipation
Derating above 25
P
D
Single Pulse Avalanche Energy Rating
(V
DD
=50V, starting T
J
=25
Operating Temperature Range
Storage Temperature Range
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
, L=9.1μH, R
G
=25
, peak I
AS
= 10A)
E
AS
520
mJ
T
OPR
T
STG
-55 ~ +150
-55 ~ +150
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
1.0
UNIT
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
/W
ELECT RICAL CHARACT ERIS T ICS
(T
C
=25
, Unless Otherwise Specified.)
PARAMETER
SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Drain to Source Breakdown
Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
BV
DSS
V
GS
= 0V, I
D
= 250μA
400
V
V
GS(THR)
V
GS
= V
DS
, I
D
= 250μA
I
D(ON)
V
DS
>I
D(ON)
x R
DS(ON)MAX
, V
GS
=10V
V
DS
= Rated BV
DSS
, V
GS
= 0V
I
DSS
V
DS
=0.8 x Rated BV
DSS
, V
GS
=0V,T
J
=125
I
GSS
V
GS
= ±20V
2.0
10
4.0
25
250
±500
V
A
μA
μA
nA
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Forward Transconductance
(Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
R
DS(ON)
V
GS
= 10V, I
D
= 5.2A
0.47 0.55
g
FS
V
DS
≥
50V, I
D
= 5.2A
5.8
8.9
S
t
DLY(ON)
t
R
t
DLY(OFF)
t
F
15
25
52
25
21
41
75
36
ns
ns
ns
ns
V
DD
= 200V, I
D
≈
10A,
R
GS
= 9.1
, R
L
= 20
, V
GS
= 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V
GS
= 10V, I
D
= 10A
V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA
Gate Charge is Essentially Independent of
Operating Temperature
Q
G(TOT)
41
63
nC
Q
GS
6.5
nC
Q
GD
23
nC
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
C
ISS
C
OSS
C
RSS
1250
300
80
pF
pF
pF
V
GS
= 0V, V
DS
=25V, f = 1.0MHz
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|---|---|
| UF740-TF3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET |
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