參數(shù)資料
型號(hào): UF730L-TA3-T
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類(lèi): JFETs
英文描述: 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET
中文描述: 6.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, TO-220, 3 PIN
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 176K
代理商: UF730L-TA3-T
UF730
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-077,A
3 of 6
ELECT RICAL CHARACT ERIS T ICS (Cont.)
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
(Note 1)
Continuous Source to Drain
Current
Pulse Source to Drain Current
(Note 2)
Reverse Recovery Time
V
SD
T
J
= 25
, I
SD
= 5.5A, V
GS
= 0V
1.6
V
I
S
5.5
A
I
SM
22
A
t
RR
T
J
= 25
dI
SD
/dt = 100A/μs
T
J
= 25
dI
SD
/dt = 100A/μs
, I
SD
= 5.5A,
140
300 660
ns
Reverse Recovery Charge
Q
RR
, I
SD
= 5.5A,
0.93
2.1
4.3
μC
Notes: 1. Pulse Test: Pulse width
≤≤
300μs, Duty Cycle
≤≤
2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. V
DD
= 50V, starting T
J
= 25
, L = 17mH, R
G
= 25
, peak I
AS
= 5.5A.
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