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參數(shù)資料
| 型號： | UF730L-TA3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET |
| 中文描述： | 6.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 176K |
| 代理商： | UF730L-TA3-T |
UF730
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-077,A
2 of 6
ABS OLUT E MAX IMUM RAT INGS
(
T
C
= 25
, Unless Otherwise Specified)
PARAMETER
SYMBOL
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
RATINGS
400
400
±20
6.5
3.5
22
93
0.6
UNIT
V
V
V
A
A
A
W
W/
Drain to Source Voltage (T
J
=25
Drain to Gate Voltage (R
GS
= 20k
) (T
J
=25
Gate to Source Voltage
~125
)
~125
)
Continuous
T
C
= 100
Pulsed
Drain Current
Maximum Power Dissipation
Derating above 25
Single Pulse Avalanche Energy Rating
(V
DD
=50V, starting T
J
=25
Operating Temperature Range
Storage Temperature Range
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
P
D
, L=17mH, R
G
=25
, peak I
AS
= 5.5A)
E
AS
300
mJ
T
OPR
T
STG
-55 ~ +150
-55 ~ +150
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JA
θ
Jc
RATINGS
80
1.67
UNIT
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
/W
ELECT RICAL CHARACT ERIS T ICS
(T
C
=25
, Unless Otherwise Specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain to Source Breakdown
Voltage
Gate to Threshold Voltage
BV
DSS
I
D
= 250μA, V
GS
= 0V
400
V
V
GS(THR)
V
DS
= V
GS
, I
D
= 250μA
V
DS
> I
D(ON)
x R
DS(ON)MAX
,
V
GS
= 10V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
,
V
GS
= 0V, T
J
= 125
V
GS
= ±20V
2.0
4.0
V
On-State Drain Current (Note 1)
I
D(ON)
5.5
A
25
μA
Zero Gate Voltage Drain Current
I
DSS
250
μA
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Forward Transconductance
(Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
I
GSS
±100
nA
R
DS(ON)
I
D
= 3.0A, V
GS
= 10V
0.8
1.0
g
FS
V
DS
≥
10V, I
D
= 3.3A
2.9
4.4
S
t
DLY(ON)
t
R
t
DLY(OFF)
t
F
10
20
35
15
17
29
56
24
ns
ns
ns
ns
V
DD
= 200V, I
D
≈
5.5A,
R
GS
= 12
, R
L
= 35
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V
GS
= 10V, I
D
= 5.5A,
V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA
Gate Charge is Essentially Independent of
Operating Temperature
Q
G(TOT)
20
35
nC
Q
GS
3.0
nC
Gate to Drain “Miller” Charge
Q
GD
10
nC
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
C
ISS
C
OSS
C
RSS
600
150
40
pF
pF
pF
V
DS
= 25V, V
GS
= 0V,f = 1MHz
相關(guān)PDF資料 |
PDF描述 |
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| UF730L-TF3-T | 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET |
| UF730-TA3-T | 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET |
| UF730-TF3-T | 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET |
| UF740 | 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UF730L-TF3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET |
| UF730L-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET |
| UF730L-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET |
| UF730L-TN3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET |
| UF730-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET |
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