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參數(shù)資料
| 型號： | UF640-TF3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET |
| 中文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 149K |
| 代理商： | UF640-TF3-T |
UF640
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
Ver.A
ELECT RICAL CHARACT ERIS T ICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Measured
From the
Contact Screw
on Tab to
Center of Die
Measured
From the Drain
Lead, 6mm
(0.25in) From
Package to
Center of Die
Measured
From the
Source Lead,
6mm (0.25in)
from Header to
Source
Bonding Pad
MIN
TYP
MAX UNIT
3.5
nH
Internal Drain Inductance
L
D
4.5
nH
Internal Source Inductance
L
S
Modified MOSFET Symbol
Showing the Internal
Devices Inductances
G
S
D
L
D
L
S
7.5
nH
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note 1)
Continuous Source Current (body
diode)
V
SD
T
J
= 25
Integral Reverse p-n Junction
Diode in the MOSFET
, I
S
= 18A, V
GS
= 0V,
2.0
V
I
S
18
A
Pulse Source Current (body diode)
(Note 1)
I
SM
Gate
Sourse
Drain
72
A
Reverse Recovery Time
t
RR
T
J
= 25
dI
S
/dt = 100A/μs
T
J
= 25
dI
S
/dt = 100A/μs
, I
S
= 18A,
120
240
530
ns
Reverse Recovery Charge
Q
RR
, I
S
= 18A,
1.3
2.8
5.6
μC
Note 1. Pulse Test: Pulse width
≤
300μs, duty cycle
≤
2%.
2. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance
curve.
3. L = 3.37mH, V
DD
= 50V, R
G
= 25
, peak I
AS
= 18A, starting T
J
= 25
.
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