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參數(shù)資料
| 型號(hào)： | UF630L-TF3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS |
| 中文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220F, 3 PIN |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 176K |
| 代理商： | UF630L-TF3-T |
UF630
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-049,B
TYPICAL CHARACTERISTICS (cont.)
FIGURE 13. TRANSFER CHARACTERISTICS
D
D
(
GATE TO SOURCE VOLTAGE, V
GS
(V)
2
5
7
0
6
1
0
2
4
6
8
125
25
-40
10
4
3
Pulse Duration=80
Duty Cycle = 0.5% Max
V
DS
>I
D(ON)
×R
DS(ON)MAX
s
D
R
D
DRAIN CURRENT I
D
(A)
10
30
40
FIGURE 14. DRAIN TO SOURCE ON RESISTANCE
vs GATE VOLTAGE AND DRAIN CURRENT
0
0
0.8
V
GS
=10V
V
GS
=20V
0.6
0.4
0.2
20
2
s Pulse Test
N
O
JUNCTION TEMPERATURE, T
J
(
)
0
80
FIGURE 15. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.2
120
-40
0.6
1
1.4
1.8
2.2
Pulse Duration=80
Duty Cycle = 0.5% Max
V
GS
=10V, I
D
=5A
s
40
N
B
JUNCTION TEMPERATURE, T
J
(
)
0
80
FIGURE 16. NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
0.75
160
-40
1.25
I
D
=250
A
40
120
0.85
0.95
1.05
1.15
FIGURE 17. CAPACITANCE vs DRAIN TO SOURCE
VOLTAGE
C
DRAIN TO SOURCE VOLTAGE, V
DS
(V)
01
400
800
2000
20
C
ISS
50
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD,
C
DS
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
C
OSS
C
RSS
1600
1200
10
30
30
T
F
DRAIN CURRENT, I
D
(A)
4
6
10
FIGURE 18. TRANSCONDUCTANCE vs DRAIN
CURRENT
0
8
2
0
2
4
6
8
10Pulse Duration=80
Duty Cycle = 0.5% Max
s
125
25
-40
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