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參數(shù)資料
| 型號(hào)： | UF630L-TF3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS |
| 中文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220F, 3 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 176K |
| 代理商： | UF630L-TF3-T |
UF630
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-049,B
TYPICAL CHARACTERISTICS
0
P
CASE TEMPERATURE, T
C
(
)
50
100
150
1.2
FIGURE 7. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
1.0
0.6
0.2
0
0.4
0.8
D
D
(
CASE TEMPERATURE, T
C
(
)
75
100
150
FIGURE 8. MAXIMUM CONTIONUOUS DRAIN
CURRENT vs CASE TEMPERATURE
0
125
50
25
2
4
6
8
10
0.01
RECTANGULAR PULSE DURATION, t
1
(s)
N
T
J
FIGURE 9. NORMALIZED TRANSIENT THERMAL
IMPEDANCE
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
Single pulse
0.2
0.1
0.05
0.01
0.1
1.0
P
DM
t1
t2
Duty Factor, D=t1/t2
Peak T
J
=P
DM
×Z
JC
R
JC
+T
C
0.02
100
10
0.1
DRAIN TO SOURCE VOLTAGE, V
DS
(V)
D
D
(
FIGURE 10. FORWARD BIAS SAFE OPERATING
AREA
100
10
1
1
1ms
1000
T
C
=25
T
J
=Max Rated
100
s
Operation in This Area
May be Limited by r
DS (on)
100ms
DC
10ms
10
s
0.5
D
D
(
DRAIN TO SOURCE VOLTAGE, V
DS,
(V)
40
60
100
FIGURE 11. OUTPUT CHARACTERISTICS
0
80
20
0
4
8
12
16
V
GS
=10V
V
GS
=8V
Pulse Duration=80
Duty Cycle = 0.5% Max
s
V
GS
=6V
V
GS
=5V
V
GS
=4V
20
V
GS
=7V
D
D
DRAIN TO SOURCE VOLTAGE, V
DS
(V)
2
3
5
FIGURE 12. SATURATION CHARACTERISTICS
0
4
1
0
2
4
6
8
Pulse Duration=80
Duty Cycle = 0.5% Max
s
V
GS
=6V
V
GS
=5V
V
GS
=4V
10
V
GS
=10V
V
GS
=9V
V
GS
=8V
V
GS
=7V
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| UF630-TF3-T | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS |
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