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參數(shù)資料
| 型號： | UCR16CM-TA3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | TRIAC |
| 中文描述： | 可控硅 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 183K |
| 代理商： | UCR16CM-TA3-T |
UCR16CM/A
TRIAC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R401-024,B
2
ABS OLUAT E MAX IUM RAT INGS
PARAMETER
SYMBOL
RATINGS
UNIT
UCR16CM-4
UCR16CMA-4
UCR16CM-6
UCR16CMA-6
UCR16CM-4
UCR16CMA-4
UCR16CM-6
UCR16CMA-6
400
Repetitive Peak Off-State Voltage
Note *
V
DRM
600
V
500
Non-Repetitive Peak Off-State Voltage
Note *
V
DSM
720
V
RMS On-State Current
(Commercial Frequency, Full Sine Waveform Tc=100
℃
)
I
T (RMS)
16
A
50Hz
60Hz
155
170
121
5
0.5
10
2
125
Peak One Cycle Surge On-State Current
(Non-Repetitive)
I
2
t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature
Note: * Gate Open
.
I
TSM
A
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
STG
A
2
s
W
W
V
A
℃
℃
-40 ~ +150
ELECT RICAL CHARACT ERIS T ICS
(Ta= 25
℃
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MT2 (+), Gate (+)
MT2 (+), Gate (-)
MT2 (-), Gate (-)
R
L
=6
MT2 (-), Gate (+)
MT2 (+), Gate (+)
MT2 (+), Gate (-)
MT2 (-), Gate (-)
MT2 (-), Gate (+)
MT2 (+), Gate (+)
MT2 (+), Gate (-)
MT2 (-), Gate (-)
MT2 (-), Gate (+)
I
TM
=25A
T
j
=125
℃
, V
D
=1/2V
DRM
V
DRM
Applied
V
D
= 12V, I
TM
= 1A
V
DRM
= Rated, T
j
= 125
℃
Exponential Rise
MIN
TYP MAX UNIT
1.5
1.5
1.5
-
30
30
30
-
20
20
20
1.5
2
25
50
300
200
I
Ⅱ
Ⅲ
IV
I
Ⅱ
Ⅲ
IV
I
Ⅱ
Ⅲ
IV
Gate Trigger Voltage
V
GT
V
D
=6V
V
UCR16CM
Gate Trigger Current
UCR16CMA
I
GT
V
D
=6V
R
L
=6
mA
Peak On-State Voltage
Gate Non-Trigger Voltage
Repetitive Peak Off-State Current
Holding Current
Critical Rate of Rise of
Off-State Voltage
V
TM
V
GD
I
DRM
I
H
V
V
mA
mA
0.2
UCR16CM
UCR16CMA
dv / dt
V/μs
UCR16CM
10
Critical Rate of Rise of
Off-State Voltage at
Commutation
UCR16CMA
(dv / dt) c
V
DRM
= 400V, T
j
= 125
℃
(di / dt) c = -8A / ms
4
V/μs
T HERMAL DAT A
PARAMETER
SYMBOL
θ
Jc
RATINGS
3
UNIT
℃
/W
Thermal Resistance Junction to Case
TO-220F
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