參數(shù)資料
型號(hào): UCC27200_07
廠(chǎng)商: Texas Instruments, Inc.
英文描述: 120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver
中文描述: 120伏啟動(dòng),3 - A峰,高頻率,低階驅(qū)動(dòng)
文件頁(yè)數(shù): 2/31頁(yè)
文件大?。?/td> 909K
代理商: UCC27200_07
www.ti.com
DESCRIPTION (CONT.)
DEVICE RATINGS
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature, unless noted, all voltages are with respect to V
SS
UCC27200, UCC27201
SLUS746–DECEMBER 2006
An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both
the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.
Two versions of the UCC27200 are offered. The UCC27200 has high noise immune CMOS input thresholds
while the UCC27201 has TTL compatible thresholds.
Both devices are offered in 8-pin SOIC (D), PowerPad SOIC-8 (DDA) and SON-8 (DRM) packages.
ORDERING INFORMATION
PACKAGED DEVICES
(1)
TEMPERATURE RANGE
T
A
= T
J
PowerPad SOIC-8
(DDA)
(2)
UCC27200DDA
UCC27201DDA
SON-8 (DRM)
(3)
INPUT COMPATIBILITY
SOIC-8 (D)
(2)
CMOS
TTL
UCC27200D
UCC27201D
UCC27200DRMT
UCC27201DRMT
-40°C to +140°C
(1)
These products are packaged in Lead (Pb)-Free and green lead finish of PdNiAu which is compatible with MSL level 1 at 255-260°C
peak reflow temperature to be compatible with either lead free or Sn/Pb soldering operations.
D (SOIC-8) and DDA (Power Pad SOIC-8) packages are available taped and reeled. Add R suffix to device type (e.g. UCC27200DR)
to order quantities of 2,500 devices per reel.
DRM (SON-8) package comes either in a small reel of 250 pieces as part number UCC27200DRMT, or larger reels of 3000 pieces as
part number UCC27200 DRMR.
(2)
(3)
(1)
PARAMETER
VALUE
UNIT
Supply voltage range,
(2)
V
DD
Input voltages on LI and HI, V
LI
, V
HI
-0.3 to 20
-0.3 to 20
DC
Repetitive pulse <100 ns
DC
Repetitive pulse <100 ns
DC
Repetitive pulse <100 ns
-0.3 to V
DD
+ 0.3,
-2 to V
DD
+ 0.3
V
HS
– 0.3 to V
HB
+ 0.3
Output voltage on LO, V
LO
Output voltage on HO, V
HO
V
V
HS
- 2 to V
HB
+ 0.3, (V
HB
- V
HS
<20)
-1 to 120
-5 to 120
-0.3 to 120
-0.3 to 20
-40 to +150
-65 to +150
Voltage on HS, V
HS
Voltage on HB, V
HB
Voltage On HB-HS
Operating virtual junction temperature range, T
J
Storage temperature, T
STG
Lead temperature (soldering, 10 sec.)
Power dissipation at T
A
= 25°C (D package)
(3)
Power dissipation at T
A
= 25°C (DDA package)
(3)
Power dissipation at T
A
= 25°C (DRM package)
(3)
°C
+300
1.3
2.7
3.3
W
(1)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to Vss. Currents are positive into, negative out of the specified terminal.
This data was taken using the JEDEC proposed high-K test PCB. See THERMAL CHARACTERISTICS section for details.
(2)
(3)
2
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