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參數(shù)資料
| 型號(hào)： | U637H256DC25G1 |
| 英文描述： | CapStore 32K x 8 nvSRAM |
| 中文描述： | CapStore 32K的× 8非易失 |
| 文件頁(yè)數(shù)： | 7/14頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | U637H256DC25G1 |
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U637H256
7
August 15, 2006
STK Control #ML0056
Rev 1.1
Nonvolatile Memory Operations
Mode Selection
E
W
A13 - A0
(hex)
Mode
I/O
Power
Notes
H
X
X
Not Selected
Output High Z
Standby
L
H
X
Read SRAM
Output Data
Active
m
L
L
X
Write SRAM
Input Data
Active
L
H
0E38
31C7
03E0
3C1F
303F
0FC0
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile STORE
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active
k, l
k, l
k, l
k, l
k, l
k, l
L
H
0E38
31C7
03E0
3C1F
303F
0C63
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile RECALL
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active
k, l
k, l
k, l
k, l
k, l
k, l
k:
The six consecutive addresses must be in order listed. W must be high during all six consecutive cycles. See STORE cycle and RECALL
cycle tables and diagrams for further details.
The following six-address sequence is used for testing purposes and should not be used: 0E38, 31C7, 03E0, 3C1F, 303F, 339C.
While there are 15 addresses on the U637H256, only the lower 14 are used to control software modes.
Activation of nonvolatile cycles does not depend on the state of G.
m: I/O state assumes that G
≤
V
IL
.
l:
No.
PowerStore
Power Up RECALL
Symbol
Conditions
Min. Max.
Unit
Alt.
IEC
24
Power Up RECALL Duration
n
t
RESTORE
650
μ
s
25
STORE Cycle Duration
f, e
t
PDSTORE
10
ms
26
Time allowed to Complete SRAM Cycle
f
t
DELAY
1
μ
s
Low Voltage Trigger Level
V
SWITCH
4.0
4.5
V
n:
t
RESTORE
starts from the time V
CC
rises above V
SWITCH
.
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