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參數(shù)資料
| 型號(hào)： | U634H256BD1K45 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大?。?/td> | 239K |
| 代理商： | U634H256BD1K45 |
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1
December 12, 1997
U634H256
PowerStore 32K x 8 nvSRAM
Pin Configuration
Pin Description
Top View
1
2
3
VCAP
A14
A12
VCCX
HSB
W
32
31
30
4
5
6
7
8
9
10
11
A7
A6
A5
A4
A3
n.c.
A2
A1
A13
A8
A9
A11
G
n.c.
A10
E
29
28
27
26
25
24
23
22
12
13
14
15
16
A0
DQ7
DQ6
DQ5
DQ4
DQ3
21
20
19
18
17
DQ0
DQ1
DQ2
VSS
PDIP
SOP
Signal Name
Signal Description
A0 - A14
DQ0 - DQ7
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
Capacitor
Hardware Controlled Store/Busy
E
G
W
VCCX
VSS
VCAP
HSB
Features
p
High-performance CMOS non-
volatile static RAM 32768 x 8 bits
25, 35 and 45 ns Access Times
10, 15 and 20 ns Output Enable
Access Times
I
= 15 mA at 200 ns Cycle Time
Automatic STORE to EEPROM
on Power Down using external
capacitor
Hardware or Software initiated
STORE
(STORE Cycle Time < 10 ms)
Automatic STORE Timing
10
5
STORE cycles to EEPROM
10 years data retention in
EEPROM
Automatic RECALL on Power Up
Software RECALL Initiation
(RECALL Cycle Time < 20
μ
s)
Unlimited RECALL cycles from
EEPROM
Single 5 V
±
10 % Operation
Operating temperature ranges:
0 to 70
-40 to 85
CECC 90000 Quality Standard
ESD characterization according
MIL STD 883C M3015.7-HBM
(classification see IC Code
Numbers)
p
p
p
p
p
p
p
p
p
p
p
p
p
°
C
°
C
p
p
p
Packages:PDIP32 (600 mil)
SOP32 (300 mil)
Description
The U634H256 has two separate
modes of operation: SRAM mode
and nonvolatile mode. In SRAM
mode, the memory operates as an
ordinary static RAM. In nonvolatile
operation, data is transferred in
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
mode SRAM functions are disab-
led.
The U634H256 is a fast static RAM
(25, 35, 45 ns), with a nonvolatile
electrically
erasable
(EEPROM) element incorporated
in each static memory cell. The
SRAM can be read and written an
unlimited number of times, while
independent nonvolatile data resi-
des in EEPROM. Data transfers
from the SRAM to the EEPROM
(the STORE operation) take place
automatically upon power down
using charge stored in an external
100
μ
F capacitor.
PROM
Transfers from the EEPROM to the
SRAM (the RECALL operation) take
place automatically on power up.
The U634H256 combines the high
performance and ease of use of a
fast SRAM with nonvolatile data
integrity.
STORE cycles also may be initiated
under user control via a software
sequence or via a single pin (HSB).
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Because a sequence of addresses
is used for STORE initiation, it is
important that no other read or write
accesses intervene in the sequence
or the sequence will be aborted.
RECALL cycles may also be initia-
ted by a software sequence.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvolatile
information is transferred into the
SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U634H256BSA35 | NOVRAM|32KX8|CMOS|SOP|32PIN|PLASTIC |
| U634H256BSC25 | PRECISION LOW POWER CMOS DUAL OP-AMPS |
| U634H256BSC35 | NVRAM (EEPROM Based) |
| U634H256BSC45 | NVRAM (EEPROM Based) |
| U634H256BSK25 | NVRAM (EEPROM Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U634H256BSA35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NOVRAM|32KX8|CMOS|SOP|32PIN|PLASTIC |
| U634H256BSC25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256BSC35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256BSC45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256BSK25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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