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參數(shù)資料
| 型號(hào)： | U634H256BD1K35 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁(yè)數(shù)： | 6/14頁(yè) |
| 文件大小： | 239K |
| 代理商： | U634H256BD1K35 |
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6
December 12, 1997
U634H256
AAAA
AAAA
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AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
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AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
A
A
A
A
AAAA
AAAA
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AAAA
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AAAA
A
A
A
A
A
L- to H-level
undefined
H- to L-level
i:
j:
If W is LOW and when E goes LOW, the outputs remain in the high impedance state.
E or W must be V
IH
during address transition.
Write Cycle #1: W-controlled
j
Write Cycle #2: E-controlled
j
t
h(D)
Ai
E
W
DQi
Input
DQi
Output
t
cW
t
su(E)
t
h(A)
t
w(W)
t
su(D)
t
dis(W)
t
en(W)
Address Valid
Input Data
High Impedance
AAAA
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AAAA
t
su(A-WH)
12
16
13
19
20
23
21
t
su(A)
t
h(D)
Ai
E
W
DQi
Input
DQi
Output
t
cW
t
w(E)
t
h(A)
t
su(D)
Input Data
t
su(W)
12
18
21
20
19
17
22
Previous Data
AAAA
15
t
su(A)
AAAA
AAAA
AAAA
AAA
AAA
AAA
AAA
15
14
High Impedance
Address Valid
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AA
AA
AA
AA
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AAAA
AA
AA
AA
AA
AAAA
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AAAA
AAAA
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AAAA
AAAA
AAA
AAA
AAA
AAA
AAAA
AAAA
AAAA
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AAAA
A
A
A
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U634H256BD1K45 | NVRAM (EEPROM Based) |
| U634H256BSA35 | NOVRAM|32KX8|CMOS|SOP|32PIN|PLASTIC |
| U634H256BSC25 | PRECISION LOW POWER CMOS DUAL OP-AMPS |
| U634H256BSC35 | NVRAM (EEPROM Based) |
| U634H256BSC45 | NVRAM (EEPROM Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U634H256BD1K45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256BSA35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NOVRAM|32KX8|CMOS|SOP|32PIN|PLASTIC |
| U634H256BSC25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256BSC35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256BSC45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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