參數(shù)資料
型號(hào): U631H16BSC25
廠商: Electronic Theatre Controls, Inc.
英文描述: SOFTSTORE 2K X 8 NVSRAM
中文描述: SOFTSTORE 2K × 8非易失性SRAM
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 275K
代理商: U631H16BSC25
4
December 12, 1997
U631H16
SRAM MEMORY OPERATIONS
e: Parameter guaranteed but not tested.
f:
Device is continuously selected with E and G both LOW.
g:
Address valid prior to or at the same time with E transition LOW.
h:
Measured
±
200 mV from steady state output voltage.
DC Characteristics
Symbol
Conditions
C-Type
K-Type
Unit
Min.
Max.
Min.
Max.
Output High Voltage
Output Low Voltage
V
OH
V
OL
V
CC
I
OH
I
OL
= 4.5 V
=-4 mA
= 8 mA
2.4
0.4
2.4
0.4
V
V
Output High Current
Output Low Current
I
OH
I
OL
V
CC
V
OH
V
OL
= 4.5 V
= 2.4 V
= 0.4 V
8
-4
8
-4
mA
mA
Input Leakage Current
High
Low
I
IH
I
IL
V
CC
V
IH
V
IL
= 5.5 V
= 5.5 V
=
0 V
-1
1
-1
1
μ
A
μ
A
Output Leakage Current
High at Three-State- Output
Low at Three-State- Output
I
OHZ
I
OLZ
V
CC
V
OH
V
OL
= 5.5 V
= 5.5 V
=
0 V
-1
1
-1
1
μ
A
μ
A
No.Read Cycle
Symbol
25
35
45
Unit
Alt.
IEC
Min.
Max.
Min.
Max.
Min.
Max.
1 Read Cycle Time
f
t
AVAV
t
cR
25
35
45
ns
2 Address Access Time to Data Valid
g
t
AVQV
t
a(A)
25
35
45
ns
3 Chip Enable Access Time to Data Valid
t
ELQV
t
a(E)
25
35
45
ns
4 Output Enable Access Time to Data Valid
t
GLQV
t
a(G)
12
20
25
ns
5
E HIGH to Output in High-Z
h
t
EHQZ
t
dis(E)
13
17
20
ns
6
G HIGH to Output in High-Z
h
t
GHQZ
t
dis(G)
13
17
20
ns
7
E LOW to Output in Low-Z
t
ELQX
t
en(E)
5
5
5
ns
8
G LOW to Output in Low-Z
t
GLQX
t
en(G)
0
0
0
ns
9 Output Hold Time after Addr. Change
g
t
AXQX
t
v(A)
3
3
3
ns
19 Chip Enable to Power Active
e
t
ELICCH
0
0
0
ns
11 Chip Disable to Power Standby
d, e
t
EHICCL
25
35
45
ns
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U631H16BSK45 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:SOFTSTORE 2K X 8 NVSRAM