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參數(shù)資料
| 型號： | U630H64DK45 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 143K |
| 代理商： | U630H64DK45 |
11
November 01, 2001
U630H64
Type
Package
D = PDIP (300 mil)
S = SOP (330 mil)
Access Time
25 = 25
35 = 35 (on special request)
45 = 45 (on special request)
Operating Temperature Range
C =
0 to 70
°
C
K = -40 to 85
°
C
ESD Class
blank > 2000 V
u
B > 1000 V
B
Test Configuration for Functional Check
V
IH
V
IL
V
SS
V
CCt
480
255
30 pF
s
V
O
S
m
I
r
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A0
A2
A3
A4
A5
A6
A8
A9
A10
A11
A12
E
W
G
5 V
NE
s:
t:
In measurement of t
dis
-times and t
en
-times the capacitance is 5 pF.
Between V
CC
and V
SS
must be connected a high frequency bypass capacitor 0.1
μ
F to avoid disturbances.
Capacitance
e
Conditions
Symbol
Min.
Max.
Unit
Input Capacitance
V
CC
V
I
f
T
a
= 5.0 V
= V
SS
= 1 MHz
= 25
°
C
C
I
8
pF
Output Capacitance
C
O
7
pF
All pins not under test must be connected with ground by capacitors.
IC Code Numbers
Example
D
U630H64
35
C
u: ESD protection > 2000 V under development
The date of manufacture is given by the last 4 digits of the mark, the first 2 digits indicating the year, and the
last 2 digits the calendar week.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U630H64SC25 | Low noise JFET quad operational amplifier |
| U630H64SC35 | Low noise JFET quad operational amplifier |
| U630H64SC45 | NVRAM (EEPROM Based) |
| U630H64SK25 | Low noise JFET quad operational amplifier |
| U630H64SK35 | NVRAM (EEPROM Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U630H64SC25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64SC35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64SC45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64SK25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64SK35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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