參數(shù)資料
型號: U4935B
英文描述: MOSFET, N, TO-3PB; Transistor type:MOSFET; Current, Id cont:2A; Resistance, Rds on:10R; Case style:TO-3PB; Current, Idm pulse:4A; Power, Pd:100W; Transistor polarity:N; Voltage, Vds max:1500V RoHS Compliant: Yes
中文描述: SECAM制式解碼器
文件頁數(shù): 5/16頁
文件大小: 183K
代理商: U4935B
U4935B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 28-Jan-97
5 (16)
Notes:
1. CVBS input: 100/75 color bar signal. The (B–Y) burst signal [f
OB
] amplitude is 167 mVpp (= 0 dB).
2. Measure during scanning. An active probe is recommended for low capacitive loading.
3. Defined as V
LIN
= b / a (see figure 4).
4. Measure the difference between the blanking (V
1
) and the black level (V
2
) (see figure 5).
V
RB
= V
2
- V
1
(Pin 9), V
BB
= V
2
- V
1
(Pin 10)
a
b
96 11719
Figure 4. V
LIN
96 11720
V2
V1
Figure 5. Black level error at Pin 9 (R–Y)
5. The external voltage at Pin 1 should exceed 0.5 V.
6. V
K
(peak-to-peak value of the burst signal in a blue line) when “LOW” (0.2 V) at Pin 5 related to 167 mV
PP
(= 0 dB)
I / K = 20
log
10
(V
K
/
167 m V) [dB]
7. Measured in the burst period of a blue line
8. The reference frequency should be stable during the vertical blanking
9. Defined as the time from rising edge of the sandxastle burst-gate pulse at Pin 15.
10. Defined as the time from falling edge of the sandxastle burst-gate pulse at Pin 15.
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PDF描述
U4935B-ADP MOSFET, N, TO-3PML; Transistor type:MOSFET; Current, Id cont:2A; Resistance, Rds on:10R; Case style:TO-3PML; Current, Idm pulse:4A; Power, Pd:50W; Transistor polarity:N; Voltage, Vds max:1500V RoHS Compliant: Yes
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