參數(shù)資料
型號: U4935B
英文描述: MOSFET, N, TO-3PB; Transistor type:MOSFET; Current, Id cont:2A; Resistance, Rds on:10R; Case style:TO-3PB; Current, Idm pulse:4A; Power, Pd:100W; Transistor polarity:N; Voltage, Vds max:1500V RoHS Compliant: Yes
中文描述: SECAM制式解碼器
文件頁數(shù): 3/16頁
文件大?。?/td> 183K
代理商: U4935B
U4935B
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 28-Jan-97
3 (16)
0
250
500
750
1000
1250
1500
0
25
50
75
100
125
150
Ambient temperature T
amb
(
°
C )
96 11702
Figure 3. Thermal derating curve of the package
(maximum rating)
Electrical Characteristics
V
S
= 8 V, T
amb
= 25
°
C, reference point Pin 6, unless otherwise specified
Test conditions: V
pin 1
= 4.75 V, V
pin 16
= 4 V, unless otherwise specified
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
DC supply
Supply voltage V
S
Supply current I
S
Pin 3
Pin 3
V
S
I
S
7.5
18
8.0
24
8.5
30
V
Note 1
mA
Bell filter
Resonance frequency
f = 4.0 - 5.0 MHz sweep
signal with 20 mV
peak-to-peak amplitude at
the CVBS input
(see note 2, page 5), Pin 2
f = 4.0 - 5.0 MHz sweep
signal with 20 mV
peak-to-peak amplitude at
the CVBS input, Pin 2
f
BO
4.236
4.286
4.336
MHz
Bandwidth
f
BW
250
320
368
kHz
Demodulator
Output DC level during blanking
Black level error –(R–Y)
Pins 9 and 10
Black/ white signal at the
CVBS input
(see note 4, page 5), Pin 9
Black/ white signal at the
CVBS input
(see note 4, page 5), Pin 10
(see note 1, page 5), Pin 9
V
O
V
RB
2.1
–15
2.8
3.5
+15
V
mV
Black level error –(B–Y)
V
BB
–50
+20
mV
–(R–Y) output signal amplitude
(peak-to-peak value)
–(B–Y) output signal amplitude
(peak-to-peak value)
V
R–Y
0.85
1.0
1.15
V
(see note 1, page 5), Pin 10
V
B–Y
1.05
1.24
1.36
V
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U4935B-ADP MOSFET, N, TO-3PML; Transistor type:MOSFET; Current, Id cont:2A; Resistance, Rds on:10R; Case style:TO-3PML; Current, Idm pulse:4A; Power, Pd:50W; Transistor polarity:N; Voltage, Vds max:1500V RoHS Compliant: Yes
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