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參數資料
| 型號： | U3810BM |
| 英文描述： | Multi Standard Feature Phone Integrated Circuit |
| 中文描述： | 多標準功能手機集成電路 |
| 文件頁數： | 15/31頁 |
| 文件大?。?/td> | 497K |
| 代理商： | U3810BM |
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TELEFUNKEN Semiconductors
U3810BM
Rev. A1: 19.01.1996
15 (31)
Parameters
Test conditions
Min.
Typ.
Max.
Unit
Fig.
Speaker amplifier
VSA shunt regulator
power supply (pin 13)
in transmission mode
Loudhearing gain (note3)
from SAI/SAIX to SO1,
SO2
Speaker amplifier without signal
EA = 1
IL = 28 mA
IL = 60 mA
4.0
7.85
4.3
8.3
4.6
8.7
V
V
8
GSA1
VSO1 – VSO2
VSAI
VSO1 – VSO2
VSAIX
GSA2
Bits
NEA2 NEA1 NEA0 VSAI = VSAIX
1
1
1
0
0
0
VSAI=3.5mV
rms
VSAI = 88 mV
rms
EA = 1
33
5
34
6
35
7
dB
dB
8
Loudhearing gain between
28 and 60 mA
GSA1 and GSA2 (note 3)
Gain adjustment of speaker
amplifier
Distortion (measured on
100
load)
EA = 1
–0.5
0
0.5
dB
8
EA = 1
gain change between two steps
EA = 1
Bits
NEA2 NEA1 NEA0 VSAI
1
1
3.8
4.0
4.2
dB
8
1
VSAI = 12 mV
rms
VSAI = 30 mV
rms
VSAI = 250 mV
rms
0
0
0
Bits
NEA2 NEA1 NEA0
1
1
0
0
EA = 1
EA = 1
I
L
= 60 mA
1
0
VSAI = 80 mV
rms
VSAI = 250 mV
rms
2.0
4.0
1.5
2.0
2.0
10
10
40
%
%
%
%
%
8
Input impedance SAI
SAIX
4
4
36
7
7
k
dB
8
8
Confidence gain in loud-
hearing
Loudhearing input
cross talk attenuation
V
MIC
= 4 mV
VSO
V
MIC
EC = 1,
ITAL = 1
EA = 1
=12 mV
rms
VSAIX = 12 mV
rms
EA = 1
NEA
VSAI
= 7
LIS = 1
LIS = 0
50 load asym.
100 load sym.
50 load asym.
100 load sym.
50 load asym.
100 load sym.
60
60
dB
dB
mW
mW
mW
mW
mW
8
Output power
(Note 4, 6)
EA =1
I
L
= 20 mA
I
L
= 28 mA
I
L
= 60 mA
9.0
19.0
140
–200
12,5
11,5
24
30
120
170
8
Output offset
(pin 14 – 15)
Leakage current (pin 6)
Offset (pin 7)
LIS = 0, 1
max. and min. gain
EA = 1
RAL = 68 k
EA = 1
EA = 1
+200
mV
8
140
140
nA
mV
8
6
I
L
= 28 mA and 60 mA
Antilarsen system
Dynamic range attenuation
CAL = 470 nF, RAL = 68 k
IL = 28 mA and 60 mA
EA = 1 VSAI = 6 mV
rms
(note 5)
Bit ISQ = 0
BIT ISQ = 1
11
23
12
26
13
29
dB
dB
8
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