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參數(shù)資料
| 型號： | U3810BM |
| 英文描述： | Multi Standard Feature Phone Integrated Circuit |
| 中文描述： | 多標(biāo)準(zhǔn)功能手機集成電路 |
| 文件頁數(shù)： | 10/31頁 |
| 文件大?。?/td> | 497K |
| 代理商： | U3810BM |
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TELEFUNKEN Semiconductors
U3810BM
Rev. A1: 19.01.1996
10 (31)
Absolute maximum ratings
Parameters
Symbol
VRI
IR
V
L
Value
35
30
15
17
150
1
–25 to +55
–55 to +150
125
Unit
V
mA
V
DC calling voltage (pin 2)
DC calling current (pin 2)
Conversation line voltage (pin 10)
V pulse 20 ms
mA
W
°
C
°
C
°
C
Conversation line current
Total power dissipation *)
Operating temperature range
Storage temperature range
Junction temperature
I
L
P
tot
T
amb
T
stg
T
j
Thermal resistance
Parameters
Symbol
R
thJA
Value
70
Unit
K/W
Junction ambient *)
Electrical characteristics
I
L
= 28 mA, T
amb
= 25
°
C, f = 1 kHz, R
DC
= 20 k
,
all internal registers cleared, unless otherwise specified
C1
L1
R1
C0
94 7894 e
Figure 5
455 kHz ceramic resonator: MURATA or equivalent
Refer to the tests circuits
Resonance factor Q
m
= 3100, L1 = 6.1 mH, C1 = 21 pF, CO = 268.5 pF, R1 = 5.5
(Schematic above)
All resistances are specified at 1%, all capacitances at 2%.
Parameters
Test conditions
Min.
4.2
6.7
12.8
2.5
3.2
Typ.
4.75
7.2
13.45
2.65
3.45
180
Max.
5.2
7.5
14.1
Unit
Fig.
Line voltage
I
L
= 15 mA
I
L
= 28 mA
I
L
= 60 mA
I
L
= 8 mA, –Idd (ICC) = 0.6 mA
I
L
= 28 mA, –Idd (ICC) = 2.3 mA
S4 on 3
V
6
VDD, VCC stabilized
power supply
IDD at VDD = 3.5 V
Internal operating supply
current
Leakage current
Speed up off threshold
VSOFF
Speed up on line– current
ISON
Speed up current
3.6
210
V
A
6
9
100
2.8
nA
V
See fig. 11
I
Lmax
= 80 mA
V
L
= 4 V
I
L
decreasing
VDD = 2.8 V
See fig. 14
2.45
5.0
2.65
5.9
7.5
mA
7
V
L
= 4 V
24 cm
2
assumed
40
70
mA
7
*) Note: Assembly on PC board
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