參數(shù)資料
型號: TXN112
廠商: 意法半導(dǎo)體
英文描述: HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY
中文描述: 高浪涌能力高通態(tài)電流高穩(wěn)定性和可靠性
文件頁數(shù): 4/5頁
文件大?。?/td> 71K
代理商: TXN112
Fig.9 :
versus number of cycles.
Non repetitive surge peak on-state current
Fig.10 :
Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t
10 ms, and
corresponding value of I2t.
Fig.8 :
Relative variation of gate trigger current versus
junction temperature.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.1
1
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.7 :
Relative variation of thermal impedance versus
pulse duration.
Fig.11 :
On-state characteristics (maximum values).
TXN/TYN 0512 ---> TXN/TYN 1012
4/5
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