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參數(shù)資料
| 型號(hào)： | TXN112 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
| 中文描述： | 高浪涌能力高通態(tài)電流高穩(wěn)定性和可靠性 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | TXN112 |
TXN/TYN 0512 --->
TXN/TYN 1012
April 1995
SCR
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(180
°
conduction angle)
TXN
TYN
Tc=80
°
C
Tc=90
°
C
12
A
IT(AV)
Average on-state current
(180
°
conduction angle,single phase circuit)
TXN
TYN
Tc=80
°
C
Tc=90
°
C
8
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°
C )
tp=8.3 ms
125
A
tp=10 ms
120
I2t
I2t value
tp=10 ms
72
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG= 100 mA
diG/dt = 1 A/
μ
s
100
A/
μ
s
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
Tl
Maximum lead temperature for soldering during 10 s at
from case
4.5 mm
260
°
C
TO220AB
(Plastic)
KAG
.
HIGH SURGE CAPABILITY
.
HIGH ON-STATE CURRENT
.
HIGH STABILITYAND RELIABILITY
.
TXNSerie :
INSULATED VOLTAGE= 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol
Parameter
TYN/TXN
Unit
0512
112
212
412
612
812
1012
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°
C
50
100
200
400
600
800
1000
V
ABSOLUTE RATINGS
(limiting values)
FEATURES
The TYN/TXN 0512 ---> TYN/TXN 1012 Family
of Silicon Controlled Rectifiers uses a high per-
formance glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
1/5
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