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參數(shù)資料
| 型號： | TXN0512 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
| 中文描述： | 高浪涌能力高通態(tài)電流高穩(wěn)定性和可靠性 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 71K |
| 代理商： | TXN0512 |
GATE CHARACTERISTICS
(maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°
C/W
Rth (j-c) DC Junction to case for DC
TXN
3.5
°
C/W
TYN
2.5
Symbol
Test Conditions
Value
Unit
IGT
VD=12V
(DC)
RL=33
Tj=25
°
C
MAX
15
mA
VGT
VD=12V
(DC)
RL=33
Tj=25
°
C
MAX
1.5
V
VGD
VD=VDRMRL=3.3k
Tj= 125
°
C
MIN
0.2
V
tgt
VD=VDRM
dIG/dt = 0.5A/
μ
s
IG= 40mA
Tj=25
°
C
TYP
2
μ
s
IL
IG= 1.2 IGT
Tj=25
°
C
TYP
50
mA
IH
IT= 100mA
gate open
Tj=25
°
C
MAX
30
mA
VTM
ITM= 24A
tp= 380
μ
s
Tj=25
°
C
MAX
1.6
V
IDRM
IRRM
VDRM
VRRM
Rated
Rated
Tj=25
°
C
MAX
0.01
mA
Tj= 125
°
C
3
dV/dt
Linear slope up to VD=67%VDRM
gate open
Tj= 125
°
C
MIN
200
V/
μ
s
tq
VD=67%VDRM
dITM/dt=30 A/
μ
s
ITM= 24A
dVD/dt= 50V/
μ
s
VR= 25V
Tj= 125
°
C
TYP
70
μ
s
PG (AV)= 1W
PGM= 10W (tp = 20
μ
s)
IFGM= 4A (tp = 20
μ
s)
VRGM= 5 V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXN/TYN 0512 ---> TXN/TYN 1012
2/5
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