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參數(shù)資料
| 型號(hào)： | TXDV608 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 三端雙向可控硅開(kāi)關(guān) |
| 英文描述： | ALTERNISTORS |
| 中文描述： | 交變 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 303K |
| 代理商： | TXDV608 |
TXDV 408 ---> 808
March 1995
ALTERNISTORS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
°
conduction angle)
Tc = 90
°
C
8
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°
C )
tp = 2.5 ms
115
A
tp = 8.3 ms
85
tp = 10 ms
80
I2t
I2t value
tp = 10 ms
32
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/
μ
s
Repetitive
F = 50 Hz
20
A/
μ
s
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°
C
TO220AB
(Plastic)
A1
A2G
VERY HIGH COMMUTATION : > 28 A/ms
(400Hz)
.
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
.
dV/dt : 500 V/
μ
s min
DESCRIPTION
Symbol
Parameter
TXDV
Unit
408
608
808
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°
C
400
600
800
V
ABSOLUTE RATINGS
(limiting values)
FEATURES
The TXDV 408 ---> 808 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
1/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TXDV612 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ALTERNISTORS |
| TXDV808 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ALTERNISTORS |
| TXDV812 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ALTERNISTORS |
| TXE-10S-16P-07-07-CAI- | 制造商:TE Connectivity 功能描述:TXE-10S-16P-07-07-CAI-F |
| TXE-10S-16P-07-07-CAI-F | 制造商:TE Connectivity 功能描述: |
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